| Citation: |
Huang Jie, Guo Tianyi, Zhang Haiying, Xu Jingbo, Fu Xiaojun, Yang Hao, Niu Jiebin. Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAsInP-based HEMT[J]. Journal of Semiconductors, 2010, 31(9): 094008. doi: 10.1088/1674-4926/31/9/094008
Huang J, Guo T Y, Zhang H Y, Xu J B, Fu X J, Yang H, Niu J B. Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAsInP-based HEMT[J]. J. Semicond., 2010, 31(9): 094008. doi: 10.1088/1674-4926/31/9/094008.
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Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAsInP-based HEMT
doi: 10.1088/1674-4926/31/9/094008
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Abstract
A new PMMA/PMGI/ZEP520/PMGI four-layer resistor electron beam lithography technology is successfully developed and used to fabricate a 120 nm gate-length lattice-matched In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT, of which the material structure is successfully designed and optimized by our group. A 980 nm ultra-wide T-gate head, which is nearly as wide as 8 times the gatefoot (120 nm), is successfully obtained, and the excellent T-gate profile greatly reduces the parasitic resistance and capacitance effect and effectively enhances the RF performances. These fabricated devices demonstrate excellent DC and RF performances such as a maximum current gain frequency of 190 GHz and a unilateral power-gain gain frequency of 146 GHz.-
Keywords:
- HEMT,
- InP,
- InGaAs/InAlAs,
- cutoff frequency
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References
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Proportional views
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