| Citation: |
Ge Binjie, Wang Xin'an, Zhang Xing, Feng Xiaoxing, Wang Qingqin. Sigma–delta modulator modeling analysis and design[J]. Journal of Semiconductors, 2010, 31(9): 095003. doi: 10.1088/1674-4926/31/9/095003
Ge B J, Wang X A, Zhang X, Feng X X, Wang Q Q. Sigma–delta modulator modeling analysis and design[J]. J. Semicond., 2010, 31(9): 095003. doi: 10.1088/1674-4926/31/9/095003.
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Sigma–delta modulator modeling analysis and design
doi: 10.1088/1674-4926/31/9/095003
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Abstract
This paper introduces a new method for SC sigma–delta modulator modeling. It studies the integrator's different equivalent circuits in the integrating and sampling phases. This model uses the OP-AMP input pair's tail current (I0) and overdrive voltage (von) as variables. The modulator's static and dynamic errors are analyzed. A group of optimized I0 and von for maximum SNR and power × area ratio can be obtained through this model. As examples, a MASH21 modulator for digital audio and a second order modulator for RFID baseband are implemented and tested, and they can achieve 91 dB and 72 dB respectively, which verifies the modeling and design criteria.-
Keywords:
- sigma-delta,
- modeling,
- transient behavior,
- optimization
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References
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