| Citation: |
Gao Wei, Guo Weiling, Zou Deshu, Jiang Wenjing, Liu Zike, Shen Guangdi. Absorption of photons in the thin film AlGaInP light emitting diode[J]. Journal of Semiconductors, 2011, 32(1): 014012. doi: 10.1088/1674-4926/32/1/014012
Gao W, Guo W L, Zou D S, Jiang W J, Liu Z K, Shen G D. Absorption of photons in the thin film AlGaInP light emitting diode[J]. J. Semicond., 2011, 32(1): 014012. doi: 10.1088/1674-4926/32/1/014012.
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Absorption of photons in the thin film AlGaInP light emitting diode
doi: 10.1088/1674-4926/32/1/014012
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Abstract
The path of photons in the thin film (TF) light emitting diode (LED) was analyzed. The reflectivity of reflector in AlGaInP TF LED with and without the AlGaInP layer was contrasted. The absorption of the AlGaInP layer was analyzed and then the light extraction was calculated and shown in figure. The TF AlGaInP LED with 8 μm and 0.6 μm GaP was fabricated. At the driving current of 20 mA, the light output power of the latter is 33% higher. For the 0.6 μm GaP LED, the etching of heavily doped GaP except the ohmic contact dot area is advised. The design and optimizing of current spreading between the n-type electrode and the p-type ohmic contact dot need further research.-
Keywords:
- LED
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References
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Proportional views
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