| Citation: |
Wang Lai, Hao Zhibiao, Han Yanjun, Luo Yi, Wang Lanxi, Chen Xuekang. Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy[J]. Journal of Semiconductors, 2011, 32(1): 014013. doi: 10.1088/1674-4926/32/1/014013
Wang L, Hao Z B, Han Y J, Luo Y, Wang L X, Chen X K. Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy[J]. J. Semicond., 2011, 32(1): 014013. doi: 10.1088/1674-4926/32/1/014013.
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Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy
doi: 10.1088/1674-4926/32/1/014013
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Abstract
AlGaN photoconductive ultraviolet detectors are fabricated to study their time response characteristics. Persistent photoconductivity, a deterring factor for the detector response time, is found to be strongly related to the grain boundary density in AlGaN epilayers. By improving the crystal-nuclei coalescence process in metal organic vapor phase epitaxy, the grain-boundary density can be reduced, resulting in an-order-of-magnitude decrease in response time.-
Keywords:
- metal organic vapor phase epitaxy
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