| Citation: |
Lei Tianfei, Luo Xiaorong, Ge Rui, Chen Xi, Wang Yuangang, Yao Guoliang, Jiang Yongheng, Zhang Bo, Li Zhaoji. Ultra-low specific on-resistance SOI double-gate trench-type MOSFET[J]. Journal of Semiconductors, 2011, 32(10): 104004. doi: 10.1088/1674-4926/32/10/104004
Lei T F, Luo X R, Ge R, Chen X, Wang Y G, Yao G L, Jiang Y H, Zhang B, Li Z J. Ultra-low specific on-resistance SOI double-gate trench-type MOSFET[J]. J. Semicond., 2011, 32(10): 104004. doi: 10.1088/1674-4926/32/10/104004.
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Ultra-low specific on-resistance SOI double-gate trench-type MOSFET
doi: 10.1088/1674-4926/32/10/104004
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Abstract
An ultra-low specific on-resistance (Ron,sp) silicon-on-insulator (SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed. The MOSFET features double gates and an oxide trench: the oxide trench is in the drift region, one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide. Firstly, the double gates reduce Ron,sp by forming dual conduction channels. Secondly, the oxide trench not only folds the drift region, but also modulates the electric field, thereby reducing device pitch and increasing the breakdown voltage (BV). A BV of 93 V and a Ron,sp of 51.8 mΩ·mm2 is obtained for a DG trench MOSFET with a 3 μm half-cell pitch. Compared with a single-gate SOI MOSFET (SG MOSFET) and a single-gate SOI MOSFET with an oxide trench (SG trench MOSFET), the Ron,sp of the DG trench MOSFET decreases by 63.3% and 33.8% at the same BV, respectively.-
Keywords:
- double gates
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] -
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