| Citation: |
Li Li, Liu Hongxia. A novel double-trench LVTSCR used in the ESD protection of a RFIC[J]. Journal of Semiconductors, 2011, 32(10): 104005. doi: 10.1088/1674-4926/32/10/104005
Li L, Liu H X. A novel double-trench LVTSCR used in the ESD protection of a RFIC[J]. J. Semicond., 2011, 32(10): 104005. doi: 10.1088/1674-4926/32/10/104005.
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A novel double-trench LVTSCR used in the ESD protection of a RFIC
doi: 10.1088/1674-4926/32/10/104005
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Abstract
A low-voltage triggering silicon-controlled rectifier (LVTSCR), for its high efficiency and low parasitic parameters, has many advantages in ESD protection, especially in ultra-deep sub-micron (UDSM) IC and high frequency applications. In this paper, the impact factors of the snapback characteristics of a LVTSCR and the configuring modes are analyzed and evaluated in detail. These parameters include anode series resistance, gate voltage, structure and size of devices. In addition, a double-trench LVTSCR is presented that can increase the hold-on voltage effectively and offers easy adjustment. Also, its snapback characteristics can obey the ESD design window rule very well. The strategy of ESD protection in a RFIC using a LVTSCR is discussed at the end of the paper.-
Keywords:
- UDSM,
- LVTSCR,
- RFIC,
- ESD design window
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] -
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