| Citation: |
Wang Qiang, Chen Lan, Li Zhigang, Ruan Wenbiao. An electroplating topography model based on layout-dependent variation of copper deposition rate[J]. Journal of Semiconductors, 2011, 32(10): 105012. doi: 10.1088/1674-4926/32/10/105012
Wang Q, Chen L, Li Z G, Ruan W B. An electroplating topography model based on layout-dependent variation of copper deposition rate[J]. J. Semicond., 2011, 32(10): 105012. doi: 10.1088/1674-4926/32/10/105012.
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An electroplating topography model based on layout-dependent variation of copper deposition rate
doi: 10.1088/1674-4926/32/10/105012
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Abstract
A layout-pattern-dependent electroplating model is developed based on the physical mechanism of the electroplating process. Our proposed electroplating model has an advantage over former ones due to a consideration of the variation of copper deposition rate with different layout parameters during the process. The simulation results compared with silicon data demonstrate the improvement in accuracy.-
Keywords:
- design for manufacturing,
- electroplating,
- modeling
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] -
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