| Citation: |
Lü Siyu, Qu Xiaosheng. AlGaAs/GaAs tunnel junctions in a 4-J tandem solar cell[J]. Journal of Semiconductors, 2011, 32(11): 112003. doi: 10.1088/1674-4926/32/11/112003
Lü S Y, Qu X S. AlGaAs/GaAs tunnel junctions in a 4-J tandem solar cell[J]. J. Semicond., 2011, 32(11): 112003. doi: 10.1088/1674-4926/32/11/112003.
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AlGaAs/GaAs tunnel junctions in a 4-J tandem solar cell
doi: 10.1088/1674-4926/32/11/112003
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Abstract
The III-V compound tandem solar cell is a third-generation new style solar cell with ultra-high efficiency. The energy band gaps of the sub-cells in a GaInP/GaAs/InGaAs/Ge 4-J tandem solar cell are 1.8, 1.4, 1.0 and 0.7 eV, respectively. In order to match the currents between sub-cells, tunnel junctions are used to connect the sub-cells. The characteristics of the tunnel junction, the material used in the tunnel junction, the compensation of the tunnel junction to the overall cell's characteristics, the tunnel junction's influence on the current density of sub-cells and the efficiency increase are discussed in the paper. An AlGaAs/GaAs tunnel junction is selected to simulate the cell's overall characteristics by PC1D, current densities of 16.02, 17.12, 17.75 and 17.45 mA/cm2 are observed, with a Voc of 3.246 V, the energy conversion efficiency under AM0 is 33.9%. -
References
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