SEMICONDUCTOR MATERIALS

Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power

Moumita Mukherjee, Pravash R. Tripathy and S. P. Pati

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Abstract: Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction Double-Drift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique, developed by the authors, for operation in the Ka-, V- and W-band frequencies. The results are further compared with corresponding Si and Ge homo-junction devices. The study shows high values of device efficiency, such as 23%, 22% and 21.5%, for n-Ge/p-Si IMPATTs at the Ka, V and W bands, respectively. The peak device negative conductances for n-Si/p-Ge and n-Ge/p-Si hetero-junction devices found to be 50.7 ? 106 S/m2 and 71.3 ? 106 S/m2, which are ~3-4 times better than their Si and Ge counterparts at the V-band. The computed values of RF power-density for n-Ge/p-Si hetero-junction IMPATTs are 1.0 ? 109, 1.1 ? 109 and 1.4 ? 109 W/m2, respectively, for Ka-, V- and W-band operation, which can be observed to be the highest when compared with Si, Ge and n-Si/p-Ge devices. Both of the hetero-junctions, especially the n-Ge/p-Si hetero-junction diode, can thus become a superior RF-power generator over a wide range of frequencies. The present study will help the device engineers to choose a suitable material pair for the development of high-power MM-wave IMPATT for applications in the civil and defense-related arena.

Key words: admittance characteristicsdouble drift diodehigh-power IMPATThigh-efficiencyMM-wave deviceSi/Ge and Ge/Si material systems

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    Received: 03 December 2014 Revised: 15 June 2011 Online: Published: 01 November 2011

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      Moumita Mukherjee, Pravash R. Tripathy, S. P. Pati. Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power[J]. Journal of Semiconductors, 2011, 32(11): 113001. doi: 10.1088/1674-4926/32/11/113001 M Mukherjee, P R Tripathy, S P Pati. Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power[J]. J. Semicond., 2011, 32(11): 113001. doi:  10.1088/1674-4926/32/11/113001.Export: BibTex EndNote
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      Moumita Mukherjee, Pravash R. Tripathy, S. P. Pati. Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power[J]. Journal of Semiconductors, 2011, 32(11): 113001. doi: 10.1088/1674-4926/32/11/113001

      M Mukherjee, P R Tripathy, S P Pati. Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power[J]. J. Semicond., 2011, 32(11): 113001. doi:  10.1088/1674-4926/32/11/113001.
      Export: BibTex EndNote

      Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power

      doi: 10.1088/1674-4926/32/11/113001
      • Received Date: 2014-12-03
      • Accepted Date: 2011-04-23
      • Revised Date: 2011-06-15
      • Published Date: 2011-10-20

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