| Citation: |
Li Zhicong, Li Panpan, Wang Bing, Li Hongjian, Liang Meng, Yao Ran, Li Jing, Deng Yuanming, Yi Xiaoyan, Wang Guohong, Li Jinmin. Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer[J]. Journal of Semiconductors, 2011, 32(11): 114007. doi: 10.1088/1674-4926/32/11/114007
Li Z C, Li P P, Wang B, Li H J, Liang M, Yao R, Li J, Deng Y M, Yi X Y, Wang G H, Li J M. Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer[J]. J. Semicond., 2011, 32(11): 114007. doi: 10.1088/1674-4926/32/11/114007.
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Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer
doi: 10.1088/1674-4926/32/11/114007
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Abstract
Through insertion of an AlGaN/GaN stack between the u-GaN and n-GaN of GaN-based light-emitting diodes (LEDs), the strain in the epilayer was increased, the dislocation density was reduced. GaN-based LEDs with different Al compositions were compared. 6.8% Al composition in the stacks showed the highest electrostatic discharge (ESD) endurance ability at the human body mode up to 6000 V and the pass yield exceeded 95%.-
Keywords:
- AlGaN/GaN stacks,
- light-emitting diodes,
- dislocation density,
- ESD
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References
[1] [2] [3] [4] [5] -
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