| Citation: |
Yang Miao, Sun Weifeng, Xu Shen, Wang Yifeng, Lu Shengli. A 140 mV 0.8 μA CMOS voltage reference based on sub-threshold MOSFETs[J]. Journal of Semiconductors, 2011, 32(11): 115011. doi: 10.1088/1674-4926/32/11/115011
Yang M, Sun W F, Xu S, Wang Y F, Lu S L. A 140 mV 0.8 μA CMOS voltage reference based on sub-threshold MOSFETs[J]. J. Semicond., 2011, 32(11): 115011. doi: 10.1088/1674-4926/32/11/115011.
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A 140 mV 0.8 μA CMOS voltage reference based on sub-threshold MOSFETs
doi: 10.1088/1674-4926/32/11/115011
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Abstract
A CMOS voltage reference circuit based on sub-threshold MOSFETs is proposed, which utilizes a temperature-dependent threshold voltage, a peaking current mirror and sub-threshold technology. The reference has been fabricated in an SMIC 0.13 μm CMOS process with only MOS transistors and resistors. The experimental results show a reference voltage variation of 2 mV for a supply voltage ranging from 0.5 to 1.2 V and 0.8 mV for temperatures from -20 to 120 ℃. The proposed circuit generates a reference voltage of 140 mV and consumes a supply current of 0.8 μA at room temperature. The occupied area is only 0.019 mm2.-
Keywords:
- sub-threshold,
- peaking current mirror,
- low voltage,
- low power
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] -
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