| Citation: |
Jie Binbin, Sah Chihtang. MOS Capacitance-Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations[J]. Journal of Semiconductors, 2011, 32(12): 121001. doi: 10.1088/1674-4926/32/12/121001
Jie B B, Sah C T. MOS Capacitance-Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations[J]. J. Semicond., 2011, 32(12): 121001. doi: 10.1088/1674-4926/32/12/121001.
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MOS Capacitance-Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations
doi: 10.1088/1674-4926/32/12/121001
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Abstract
Low-frequency and high-frequency Capacitance-Voltage (C-V) curves of Metal-Oxide-Semiconductor Capacitors (MOSC), including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from > 0.01Cox to > 10Cox. Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, NDD, the ground state electron trapping energy level depth measured from the conduction band edge, EC-ED, the degeneracy of the trapped electron at the ground state, gD, the device temperature, T, and the gate oxide thickness, xox.-
Keywords:
- trapping capacitance,
- donor dopant impurity,
- electron trap,
- MOS
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References
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