SEMICONDUCTOR MATERIALS

In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire

Gong Yibin, Dai Pengfei, Gao Anran, Li Tie, Zhou Ping and Wang Yuelin

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Abstract: Nanoscale refinement on a (100) oriented silicon-on-insulator (SOI) wafer was introduced by using tetra-methyl-ammonium hydroxide (TMAH, 25 wt%) anisotropic silicon etchant, with temperature kept at 50 ℃ to achieve precise etching of the (111) crystal plane. Specifically for a silicon nanowire (SiNW) with oxide sidewall protection, the in situ TMAH process enabled effective size reduction in both lateral (2.3 nm/min) and vertical (1.7 nm/min) dimensions. A sub-50 nm SiNW with a length of microns with uniform triangular cross-section was achieved accordingly, yielding enhanced field effect transistor (FET) characteristics in comparison with its 100 nm-wide pre-refining counterpart, which demonstrated the feasibility of this highly controllable refinement process. Detailed examination revealed that the high surface quality of the (111) plane, as well as the bulk depletion property should be the causes of this electrical enhancement, which implies the great potential of the as-made cost-effective SiNW FET device in many fields.

Key words: TMAH etching

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    Received: 20 August 2015 Revised: 16 July 2011 Online: Published: 01 December 2011

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      Gong Yibin, Dai Pengfei, Gao Anran, Li Tie, Zhou Ping, Wang Yuelin. In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire[J]. Journal of Semiconductors, 2011, 32(12): 123003. doi: 10.1088/1674-4926/32/12/123003 Gong Y B, Dai P F, Gao A R, Li T, Zhou P, Wang Y L. In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire[J]. J. Semicond., 2011, 32(12): 123003. doi: 10.1088/1674-4926/32/12/123003.Export: BibTex EndNote
      Citation:
      Gong Yibin, Dai Pengfei, Gao Anran, Li Tie, Zhou Ping, Wang Yuelin. In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire[J]. Journal of Semiconductors, 2011, 32(12): 123003. doi: 10.1088/1674-4926/32/12/123003

      Gong Y B, Dai P F, Gao A R, Li T, Zhou P, Wang Y L. In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire[J]. J. Semicond., 2011, 32(12): 123003. doi: 10.1088/1674-4926/32/12/123003.
      Export: BibTex EndNote

      In situ nanoscale refinement by highly controllable etching of the (111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire

      doi: 10.1088/1674-4926/32/12/123003
      Funds:

      The National High Technology Research and Development Program of China (863 Program)

      The National Basic Research Program of China (973 Program)

      Fund for Creative Research Groups

      • Received Date: 2015-08-20
      • Accepted Date: 2011-05-31
      • Revised Date: 2011-07-16
      • Published Date: 2011-11-23

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