| Citation: |
Li Qi, Zhu Jinluan, Wang Weidong, Yue Hongwei, Jin Liangnian. A novel high-voltage device structure with an N+ ring in substrate and the breakdown voltage model[J]. Journal of Semiconductors, 2011, 32(12): 124005. doi: 10.1088/1674-4926/32/12/124005
Li Q, Zhu J L, Wang W D, Yue H W, Jin L N. A novel high-voltage device structure with an N+ ring in substrate and the breakdown voltage model[J]. J. Semicond., 2011, 32(12): 124005. doi: 10.1088/1674-4926/32/12/124005.
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A novel high-voltage device structure with an N+ ring in substrate and the breakdown voltage model
doi: 10.1088/1674-4926/32/12/124005
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Abstract
A novel high-voltage device structure with a floating heavily doped N+ ring embedded in the substrate is reported, which is called FR LDMOS. When the N+ ring is introduced in the device substrate, the electric field peak of the main junction is reduced due to the transfer of the voltage from the main junction to the N+ ring junction, and the vertical breakdown characteristic is improved significantly. Based on the Poisson equation of cylindrical coordinates, a breakdown voltage model is developed. The numerical results indicate that the breakdown voltage of the proposed device is increased by 56% in comparison to conventional LDMOS.-
Keywords:
- floating ring,
- model,
- breakdown voltage,
- modulation
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] -
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