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A low voltage and small hysteresis C60 thin film transistor

Zhou Jianlin and Chen Rengang

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Abstract: Organic thin film transistors with C60 as an n-type semiconductor have been fabricated. A tantalum pentoxide (Ta2O5)/poly-methylmethacrylate (PMMA) double-layer structured gate dielectric was used. The Ta2O5 layer was prepared by using a simple solution-based and economical anodization technique. Our results demonstrate that double gate insulators can combine the advantage of Ta2O5 with high dielectric constant and polymer insulator for a better interface with the organic semiconductor. The performance of the device can be improved obviously with double gate insulators, compared to that obtained by using a single Ta2O5 or PMMA insulator. Then, a good performance n-type OTFT, which can work at 10 V with mobility, threshold voltage and on/off current ratio of, respectively, 0.26 cm2/(V.s), 3.2 V and 8.31 × 104 , was obtained. Moreover, such an OTFT shows a negligible ``hysteresis effect'' contributing to the hydroxyl-free insulator surface.

Key words: organic thin film transistorsC60double gate dielectrics

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    Received: 18 August 2015 Revised: 01 July 2010 Online: Published: 01 February 2011

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      Zhou Jianlin, Chen Rengang. A low voltage and small hysteresis C60 thin film transistor[J]. Journal of Semiconductors, 2011, 32(2): 024006. doi: 10.1088/1674-4926/32/2/024006 Zhou J L, Chen R G. A low voltage and small hysteresis C60 thin film transistor[J]. J. Semicond., 2011, 32(2): 024006. doi: 10.1088/1674-4926/32/2/024006.Export: BibTex EndNote
      Citation:
      Zhou Jianlin, Chen Rengang. A low voltage and small hysteresis C60 thin film transistor[J]. Journal of Semiconductors, 2011, 32(2): 024006. doi: 10.1088/1674-4926/32/2/024006

      Zhou J L, Chen R G. A low voltage and small hysteresis C60 thin film transistor[J]. J. Semicond., 2011, 32(2): 024006. doi: 10.1088/1674-4926/32/2/024006.
      Export: BibTex EndNote

      A low voltage and small hysteresis C60 thin film transistor

      doi: 10.1088/1674-4926/32/2/024006
      • Received Date: 2015-08-18
      • Accepted Date: 2010-05-27
      • Revised Date: 2010-07-01
      • Published Date: 2011-01-10

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