SEMICONDUCTOR DEVICES

Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

Chen Fengping, Zhang Yuming, Lü Hongliang, Zhang Yimen, Guo Hui and Guo Xin

+ Author Affiliations

PDF

Abstract: 4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent P-type ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore, the P-type ohmic contact is studied in this work.

Key words: 4H-SiC

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3377 Times PDF downloads: 4242 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 22 February 2011 Online: Published: 01 June 2011

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Chen Fengping, Zhang Yuming, Lü Hongliang, Zhang Yimen, Guo Hui, Guo Xin. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode[J]. Journal of Semiconductors, 2011, 32(6): 064003. doi: 10.1088/1674-4926/32/6/064003 Chen F P, Zhang Y M, Lü H L, Zhang Y M, Guo H, Guo X. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode[J]. J. Semicond., 2011, 32(6): 064003. doi:  10.1088/1674-4926/32/6/064003.Export: BibTex EndNote
      Citation:
      Chen Fengping, Zhang Yuming, Lü Hongliang, Zhang Yimen, Guo Hui, Guo Xin. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode[J]. Journal of Semiconductors, 2011, 32(6): 064003. doi: 10.1088/1674-4926/32/6/064003

      Chen F P, Zhang Y M, Lü H L, Zhang Y M, Guo H, Guo X. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode[J]. J. Semicond., 2011, 32(6): 064003. doi:  10.1088/1674-4926/32/6/064003.
      Export: BibTex EndNote

      Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode

      doi: 10.1088/1674-4926/32/6/064003
      • Received Date: 2015-08-18
      • Accepted Date: 2010-11-01
      • Revised Date: 2011-02-22
      • Published Date: 2011-05-23

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return