| Citation: |
Liu Zhangli, Hu Zhiyuan, Zhang Zhengxuan, Shao Hua, Chen Ming, Bi Dawei, Ning Bingxu, Zou Shichang. Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET[J]. Journal of Semiconductors, 2011, 32(6): 064004. doi: 10.1088/1674-4926/32/6/064004
Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X, Zou S C. Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET[J]. J. Semicond., 2011, 32(6): 064004. doi: 10.1088/1674-4926/32/6/064004.
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Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET
doi: 10.1088/1674-4926/32/6/064004
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Abstract
The effects of gamma irradiation on the shallow trench isolation (STI) leakage currents in a 0.18 μm technology are investigated. NMOSFETs with different gate lengths are irradiated at several dose levels. The threshold voltage shift is negligible in all of the devices due to the very thin oxide thickness. However, an increase in the off-state leakage current is observed for all of the devices. We believe that the leakage is induced by the drain-to-source leakage path along the STI sidewall, which is formed by the positive trapped charge in the STI oxide. Also, we found that the leakage is dependent on the device's gate length. The three-transistor model (one main transistor with two parasitic transistors) can provide us with a brief understanding of the dependence on gate length. -
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