SEMICONDUCTOR DEVICES

Double humps and radiation effects of SOI NMOSFET

Cui Jiangwei, Yu Xuefeng, Ren Diyuan, He Chengfa, Gao Bo, Li Ming and Lu Jian

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Abstract: Radiation experiments have been carried out with a SOI NMOSFET. The behavior of double humps was studied under irradiation. The characterization of the hump was demonstrated. The results have shown that the shape of the hump changed along with the total dose and the reason for this was analyzed. In addition, the coupling effect of the back-gate transistor was more important for the main transistor than the parasitic transistor.

Key words: SOI

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    Received: 18 August 2015 Revised: 07 February 2011 Online: Published: 01 June 2011

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      Cui Jiangwei, Yu Xuefeng, Ren Diyuan, He Chengfa, Gao Bo, Li Ming, Lu Jian. Double humps and radiation effects of SOI NMOSFET[J]. Journal of Semiconductors, 2011, 32(6): 064006. doi: 10.1088/1674-4926/32/6/064006 Cui J W, Yu X F, Ren D Y, He C F, Gao B, Li M, Lu J. Double humps and radiation effects of SOI NMOSFET[J]. J. Semicond., 2011, 32(6): 064006. doi: 10.1088/1674-4926/32/6/064006.Export: BibTex EndNote
      Citation:
      Cui Jiangwei, Yu Xuefeng, Ren Diyuan, He Chengfa, Gao Bo, Li Ming, Lu Jian. Double humps and radiation effects of SOI NMOSFET[J]. Journal of Semiconductors, 2011, 32(6): 064006. doi: 10.1088/1674-4926/32/6/064006

      Cui J W, Yu X F, Ren D Y, He C F, Gao B, Li M, Lu J. Double humps and radiation effects of SOI NMOSFET[J]. J. Semicond., 2011, 32(6): 064006. doi: 10.1088/1674-4926/32/6/064006.
      Export: BibTex EndNote

      Double humps and radiation effects of SOI NMOSFET

      doi: 10.1088/1674-4926/32/6/064006
      • Received Date: 2015-08-18
      • Accepted Date: 2010-11-08
      • Revised Date: 2011-02-07
      • Published Date: 2011-05-23

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