SEMICONDUCTOR INTEGRATED CIRCUITS

A process-insensitive thermal protection circuit

Zhao Lei, Zhang Haiying, Huang Shuilong and Wang Xiaosong

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Abstract: A novel process-insensitive thermal protection structure has been developed. This circuit contains several sub-circuits such as band-gap reference, reference output buffer, resistance voltage divider branch, and hysteresis circuit. By using reference buffer, the precise reference voltage from band-gap reference is delivered to resistance voltage divider branch and is divided precisely. Then the threshold temperatures of this protection circuit can be set by this precise voltage, unaffected by process variation and mismatch. A hysteresis circuit is also used here to prevent thermal oscillation. This circuit is fabricated in TSMC 0.18 μm CMOS technology, and occupies about 3 × 104 μm2 chip area.

Key words: thermal protection

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    Received: 18 August 2015 Revised: 02 March 2011 Online: Published: 01 July 2011

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      Zhao Lei, Zhang Haiying, Huang Shuilong, Wang Xiaosong. A process-insensitive thermal protection circuit[J]. Journal of Semiconductors, 2011, 32(7): 075013. doi: 10.1088/1674-4926/32/7/075013 Zhao L, Zhang H Y, Huang S L, Wang X S. A process-insensitive thermal protection circuit[J]. J. Semicond., 2011, 32(7): 075013. doi: 10.1088/1674-4926/32/7/075013.Export: BibTex EndNote
      Citation:
      Zhao Lei, Zhang Haiying, Huang Shuilong, Wang Xiaosong. A process-insensitive thermal protection circuit[J]. Journal of Semiconductors, 2011, 32(7): 075013. doi: 10.1088/1674-4926/32/7/075013

      Zhao L, Zhang H Y, Huang S L, Wang X S. A process-insensitive thermal protection circuit[J]. J. Semicond., 2011, 32(7): 075013. doi: 10.1088/1674-4926/32/7/075013.
      Export: BibTex EndNote

      A process-insensitive thermal protection circuit

      doi: 10.1088/1674-4926/32/7/075013
      • Received Date: 2015-08-18
      • Accepted Date: 2010-12-30
      • Revised Date: 2011-03-02
      • Published Date: 2011-06-22

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