| Citation: |
Chen Deyuan. Resonant tunnelling in nc-Si/SiO2 multilayers at room temperature[J]. Journal of Semiconductors, 2011, 32(8): 083004. doi: 10.1088/1674-4926/32/8/083004
Chen D Y. Resonant tunnelling in nc-Si/SiO2 multilayers at room temperature[J]. J. Semicond., 2011, 32(8): 083004. doi: 10.1088/1674-4926/32/8/083004.
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Resonant tunnelling in nc-Si/SiO2 multilayers at room temperature
doi: 10.1088/1674-4926/32/8/083004
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Abstract
Nc-Si/SiO2 multilayers were fabricated on silicon wafers in a plasma enhanced chemical vapour deposition system using in situ oxidation technology, followed by three-step thermal treatments. Carrier transportation at room temperature is characterized by current voltage measurement, and negative different conductances can be observed both under forward and negative biases, which is explained by resonant tunnelling. The resonant tunnelling peak voltage is related to the thicknesses of the nc-Si and SiO2 sublayers. And the resonant tunnelling peak voltage under negative bias is larger than that under forward bias. An energy band diagram and an equivalent circuit diagram were constructed to analyze and explain the above transportation process and properties.-
Keywords:
- resonant tunnelling,
- work function,
- quantum dots
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] -
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