| Citation: |
Chen Haiyang, Li Darang, Yin Jianhua, Cai Shengguo. Built-in electric field thickness design for betavoltaic batteries[J]. Journal of Semiconductors, 2011, 32(9): 094009. doi: 10.1088/1674-4926/32/9/094009
Chen H Y, Li D R, Yin J H, Cai S G. Built-in electric field thickness design for betavoltaic batteries[J]. J. Semicond., 2011, 32(9): 094009. doi: 10.1088/1674-4926/32/9/094009.
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Built-in electric field thickness design for betavoltaic batteries
doi: 10.1088/1674-4926/32/9/094009
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Abstract
Isotope source energy deposition along the thickness direction of a semiconductor is calculated, based upon which an ideal short current is evaluated for betavoltaic batteries. Electron-hole pair recombination and drifting length in a PN junction built-in electric field are extracted by comparing the measured short currents with the ideal short currents. A built-in electric field thickness design principle is proposed for betavoltaic batteries: after measuring the energy deposition depth and the carrier drift length, the shorter one should then be chosen as the built-in electric field thickness. If the energy deposition depth is much larger than the carrier drift length, a multijunction is preferred in betavoltaic batteries and the number of the junctions should be the value of the deposition depth divided by the drift length. -
References
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