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An SPICE model for phase-change memory simulations

Li Xi, Song Zhitang, Cai Daolin, Chen Xiaogang and Chen Houpeng

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Abstract: Along with a series of research works on the physical prototype and properties of the memory cell, an SPICE model for phase-change memory (PCM) simulations based on Verilog-A language is presented. By handling it with the heat distribution algorithm, threshold switching theory and the crystallization kinetic model, the proposed SPICE model can effectively reproduce the physical behaviors of the phase-change memory cell. In particular, it can emulate the cell's temperature curve and crystallinity profile during the programming process, which can enable us to clearly understand the PCM's working principle and program process.

Key words: phase-change memorySPICEVerilog-A

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    Received: 20 August 2015 Revised: 19 April 2011 Online: Published: 01 September 2011

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      Li Xi, Song Zhitang, Cai Daolin, Chen Xiaogang, Chen Houpeng. An SPICE model for phase-change memory simulations[J]. Journal of Semiconductors, 2011, 32(9): 094011. doi: 10.1088/1674-4926/32/9/094011 Li X, Song Z T, Cai D L, Chen X G, Chen H P. An SPICE model for phase-change memory simulations[J]. J. Semicond., 2011, 32(9): 094011. doi: 10.1088/1674-4926/32/9/094011.Export: BibTex EndNote
      Citation:
      Li Xi, Song Zhitang, Cai Daolin, Chen Xiaogang, Chen Houpeng. An SPICE model for phase-change memory simulations[J]. Journal of Semiconductors, 2011, 32(9): 094011. doi: 10.1088/1674-4926/32/9/094011

      Li X, Song Z T, Cai D L, Chen X G, Chen H P. An SPICE model for phase-change memory simulations[J]. J. Semicond., 2011, 32(9): 094011. doi: 10.1088/1674-4926/32/9/094011.
      Export: BibTex EndNote

      An SPICE model for phase-change memory simulations

      doi: 10.1088/1674-4926/32/9/094011
      Funds:

      The National Basic Research Program of China (2007CB935400, 2010CB934300), The National Integrate Circuit Research Program of China (2009ZX02023-003), The Science and Technology Council of Shanghai (09QH1402600,1052nm07000).

      • Received Date: 2015-08-20
      • Accepted Date: 2011-02-22
      • Revised Date: 2011-04-19
      • Published Date: 2011-08-31

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