| Citation: |
Ma Juncai, Zhang Jincheng, Xue Junshuai, Lin Zhiyu, Liu Ziyang, Xue Xiaoyong, Ma Xiaohua, Hao Yue. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage[J]. Journal of Semiconductors, 2012, 33(1): 014002. doi: 10.1088/1674-4926/33/1/014002
Ma J C, Zhang J C, Xue J S, Lin Z Y, Liu Z Y, Xue X Y, Ma X H, Hao Y. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage[J]. J. Semicond., 2012, 33(1): 014002. doi: 10.1088/1674-4926/33/1/014002.
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Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage
doi: 10.1088/1674-4926/33/1/014002
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Abstract
We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (～ 100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (～ 50 V) for the device with gate dimensions of 0.5 × 100 μ m and a gate-drain distance of 1 μ m. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz. -
References
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