SEMICONDUCTOR DEVICES

Impact of parasitic resistance on the ESD robustness of high-voltage devices

Lin Lijuan, Jiang Lingli, Fan Hang and Zhang Bo

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Abstract: The impacts of substrate parasitic resistance and drain ballast resistance on electrostatic discharge (ESD) robustness of LDMOS are analyzed. By increasing the two parasitic resistances, the ESD robustness of LDMOS are significantly improved. The proposed structures have been successfully verified in a 0.35 μm BCD process without using additional process steps. Experimental results show that the second breakdown current of the optimal structure increases to 3.5 A, which is about 367% of the original device.

Key words: electrostatic dischargehigh-voltage deviceLDMOSparasitic resistance

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    Received: 20 August 2015 Revised: 09 August 2011 Online: Published: 01 January 2012

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      Lin Lijuan, Jiang Lingli, Fan Hang, Zhang Bo. Impact of parasitic resistance on the ESD robustness of high-voltage devices[J]. Journal of Semiconductors, 2012, 33(1): 014005. doi: 10.1088/1674-4926/33/1/014005 Lin L J, Jiang L L, Fan H, Zhang B. Impact of parasitic resistance on the ESD robustness of high-voltage devices[J]. J. Semicond., 2012, 33(1): 014005. doi: 10.1088/1674-4926/33/1/014005.Export: BibTex EndNote
      Citation:
      Lin Lijuan, Jiang Lingli, Fan Hang, Zhang Bo. Impact of parasitic resistance on the ESD robustness of high-voltage devices[J]. Journal of Semiconductors, 2012, 33(1): 014005. doi: 10.1088/1674-4926/33/1/014005

      Lin L J, Jiang L L, Fan H, Zhang B. Impact of parasitic resistance on the ESD robustness of high-voltage devices[J]. J. Semicond., 2012, 33(1): 014005. doi: 10.1088/1674-4926/33/1/014005.
      Export: BibTex EndNote

      Impact of parasitic resistance on the ESD robustness of high-voltage devices

      doi: 10.1088/1674-4926/33/1/014005
      Funds:

      The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-05-17
      • Revised Date: 2011-08-09
      • Published Date: 2011-12-28

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