SEMICONDUCTOR DEVICES

SEE characteristics of small feature size devices by using laser backside testing

Feng Guoqiang, Shangguan Shipeng, Ma Yingqi and Han Jianwei

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Abstract: This paper presents single event upset (SEU) and single event latch-up (SEL) characteristics of small feature size devices by laser backside testing method, which is dedicated to dealing with the increasing metal layers on the front side of integrated circuits. The influence of test data pattern on SEU threshold and cross-section is investigated. The supply current state of micro latch-up for deep sub-micron SRAM is described. The laser energy thresholds were correlated to heavy ion thresholds LET to determine an empirical relationship between laser energy threshold and heavy ion LET. This empirical relationship was used to estimate the equivalent laser LETs for devices fabricated in small feature sizes. Moreover, the SEU of a Power PC CPU fabricated with 90 nm SOI CMOS process has been tested, which indicates that the laser backside method could be used to evaluate SOI small feature size devices.

Key words: SEUSELlaserbackside

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    Received: 20 August 2015 Revised: 19 August 2011 Online: Published: 01 January 2012

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      Feng Guoqiang, Shangguan Shipeng, Ma Yingqi, Han Jianwei. SEE characteristics of small feature size devices by using laser backside testing[J]. Journal of Semiconductors, 2012, 33(1): 014008. doi: 10.1088/1674-4926/33/1/014008 Feng G Q, Shang G S P, Ma Y Q, Han J W. SEE characteristics of small feature size devices by using laser backside testing[J]. J. Semicond., 2012, 33(1): 014008. doi: 10.1088/1674-4926/33/1/014008.Export: BibTex EndNote
      Citation:
      Feng Guoqiang, Shangguan Shipeng, Ma Yingqi, Han Jianwei. SEE characteristics of small feature size devices by using laser backside testing[J]. Journal of Semiconductors, 2012, 33(1): 014008. doi: 10.1088/1674-4926/33/1/014008

      Feng G Q, Shang G S P, Ma Y Q, Han J W. SEE characteristics of small feature size devices by using laser backside testing[J]. J. Semicond., 2012, 33(1): 014008. doi: 10.1088/1674-4926/33/1/014008.
      Export: BibTex EndNote

      SEE characteristics of small feature size devices by using laser backside testing

      doi: 10.1088/1674-4926/33/1/014008
      Funds:

      The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-07-05
      • Revised Date: 2011-08-19
      • Published Date: 2011-12-28

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