| Citation: |
Wang Wei, Wang Jing, Zhao Mei, Liang Renrong, Xu Jun. Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath[J]. Journal of Semiconductors, 2012, 33(10): 102004. doi: 10.1088/1674-4926/33/10/102004
Wang W, Wang J, Zhao M, Liang R R, Xu J. Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath[J]. J. Semicond., 2012, 33(10): 102004. doi: 10.1088/1674-4926/33/10/102004.
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Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath
doi: 10.1088/1674-4926/33/10/102004
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Abstract
Insertion of a C-containing layer in a metal/Ge structure, using a chemical bath, enabled the Schottky barrier height (SBH) to be modulated. Chemical baths with 1-octadecene, 1-hexadecene, 1-tetradecene, and 1-dodecene were used separately with Ge substrates. An ultrathin C-containing layer stops the penetration of free electron wave functions from the metal to the Ge. Metal-induced gap states are alleviated and the pinned Fermi level is released. The SBH is lowered to 0.17 eV. This new formation method is much less complex than traditional ones, and the result is very good.-
Keywords:
- Schottky barrier
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References
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