SEMICONDUCTOR DEVICES

High voltage SOI LDMOS with a compound buried layer

Luo Xiaorong, Hu Gangyi, Zhou Kun, Jiang Yongheng, Wang Pei, Wang Qi, Luo Yinchun, Zhang Bo and Li Zhaoji

+ Author Affiliations

PDF

Abstract: An SOI LDMOS with a compound buried layer (CBL) was proposed. The CBL consists of an upper buried oxide layer (UBOX) with a Si window and two oxide steps, a polysilicon layer and a lower buried oxide layer (LBOX). In the blocking state, the electric field strengths in the UBOX and LBOX are increased from 88 V/μm of the buried oxide (BOX) in a conventional SOI (C-SOI) LDMOS to 163 V/μm and 460 V/μm by the holes located on the top interfaces of the UBOX and LBOX, respectively. Compared with the C-SOI LDMOS, the CBL LDMOS increases the breakdown voltage from 477 to 847 V, and lowers the maximal temperature by 6 K.

Key words: SOIelectric fieldspecific on-resistancebreakdown voltage

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3677 Times PDF downloads: 1364 Times Cited by: 0 Times

    History

    Received: 03 December 2014 Revised: 01 May 2012 Online: Published: 01 October 2012

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Luo Xiaorong, Hu Gangyi, Zhou Kun, Jiang Yongheng, Wang Pei, Wang Qi, Luo Yinchun, Zhang Bo, Li Zhaoji. High voltage SOI LDMOS with a compound buried layer[J]. Journal of Semiconductors, 2012, 33(10): 104003. doi: 10.1088/1674-4926/33/10/104003 Luo X R, Hu G Y, Zhou K, Jiang Y H, Wang P, Wang Q, Luo Y C, Zhang B, Li Z J. High voltage SOI LDMOS with a compound buried layer[J]. J. Semicond., 2012, 33(10): 104003. doi: 10.1088/1674-4926/33/10/104003.Export: BibTex EndNote
      Citation:
      Luo Xiaorong, Hu Gangyi, Zhou Kun, Jiang Yongheng, Wang Pei, Wang Qi, Luo Yinchun, Zhang Bo, Li Zhaoji. High voltage SOI LDMOS with a compound buried layer[J]. Journal of Semiconductors, 2012, 33(10): 104003. doi: 10.1088/1674-4926/33/10/104003

      Luo X R, Hu G Y, Zhou K, Jiang Y H, Wang P, Wang Q, Luo Y C, Zhang B, Li Z J. High voltage SOI LDMOS with a compound buried layer[J]. J. Semicond., 2012, 33(10): 104003. doi: 10.1088/1674-4926/33/10/104003.
      Export: BibTex EndNote

      High voltage SOI LDMOS with a compound buried layer

      doi: 10.1088/1674-4926/33/10/104003
      • Received Date: 2014-12-03
      • Accepted Date: 2012-03-15
      • Revised Date: 2012-05-01
      • Published Date: 2012-09-10

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return