SEMICONDUCTOR MATERIALS

Low threading dislocation density in GaN films grown on patterned sapphire substrates

Liang Meng, Wang Guohong, Li Hongjan, Li Zhicong, Yao Ran, Wang Bing, Li Panpan, Li Jing, Yi Xiaoyan, Wang Junxi and Li Jinmin

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Abstract: The growth process of three-dimensional growth mode (3D) switching to two-dimensional growth mode (2D) is investigated when GaN films are grown on cone-shaped patterned sapphire substrates by metal-organic chemical vapor deposition. The growth condition of the 3D-2D growth process is optimized to reduce the threading dislocation density (TDD). It is found that the condition of the 3D layer is critical. The 3D layer keeps growing under the conditions of low V/III ratio, low temperature, and high pressure until its thickness is comparable to the height of the cone-shaped patterns. Then the 3D layer surrounds the cone-shaped patterns and has inclined side facets and a top (0001) plane. In the following 2D-growth process, inclined side facets coalesce quickly and the interaction of TDs with the side facets causes the TDs to bend over. As a result, the TDD of GaN films can decrease to 1 × 108 cm-2, giving full-width at half maximum values of 211 and 219 arcsec for (002) and (102) omega scans, respectively.

Key words: threading dislocation

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    Received: 20 August 2015 Revised: 28 April 2012 Online: Published: 01 November 2012

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      Liang Meng, Wang Guohong, Li Hongjan, Li Zhicong, Yao Ran, Wang Bing, Li Panpan, Li Jing, Yi Xiaoyan, Wang Junxi, Li Jinmin. Low threading dislocation density in GaN films grown on patterned sapphire substrates[J]. Journal of Semiconductors, 2012, 33(11): 113002. doi: 10.1088/1674-4926/33/11/113002 Liang M, Wang G H, Li H, Li Z C, Yao R, Wang B, Li P P, Li J, Yi X Y, Wang J X, Li J M. Low threading dislocation density in GaN films grown on patterned sapphire substrates[J]. J. Semicond., 2012, 33(11): 113002. doi: 10.1088/1674-4926/33/11/113002.Export: BibTex EndNote
      Citation:
      Liang Meng, Wang Guohong, Li Hongjan, Li Zhicong, Yao Ran, Wang Bing, Li Panpan, Li Jing, Yi Xiaoyan, Wang Junxi, Li Jinmin. Low threading dislocation density in GaN films grown on patterned sapphire substrates[J]. Journal of Semiconductors, 2012, 33(11): 113002. doi: 10.1088/1674-4926/33/11/113002

      Liang M, Wang G H, Li H, Li Z C, Yao R, Wang B, Li P P, Li J, Yi X Y, Wang J X, Li J M. Low threading dislocation density in GaN films grown on patterned sapphire substrates[J]. J. Semicond., 2012, 33(11): 113002. doi: 10.1088/1674-4926/33/11/113002.
      Export: BibTex EndNote

      Low threading dislocation density in GaN films grown on patterned sapphire substrates

      doi: 10.1088/1674-4926/33/11/113002
      • Received Date: 2015-08-20
      • Accepted Date: 2012-04-12
      • Revised Date: 2012-04-28
      • Published Date: 2012-10-23

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