| Citation: |
Dai Zhenqing, Zhang Liying, Chen Changxin, Qian Bingjian, Xu Dong, Chen Haiyan, Wei Liangming, Zhang Yafei. Fabrication of SiC nanowire thin-film transistors using dielectrophoresis[J]. Journal of Semiconductors, 2012, 33(11): 114001. doi: 10.1088/1674-4926/33/11/114001
Dai Z Q, Zhang L Y, Chen C X, Qian B J, Xu D, Chen H Y, Wei L M, Zhang Y F. Fabrication of SiC nanowire thin-film transistors using dielectrophoresis[J]. J. Semicond., 2012, 33(11): 114001. doi: 10.1088/1674-4926/33/11/114001.
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Fabrication of SiC nanowire thin-film transistors using dielectrophoresis
doi: 10.1088/1674-4926/33/11/114001
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Abstract
The selection of solvents for SiC nanowires (NWs) in a dielectrophoretic process is discussed theoretically and experimentally. From the viewpoints of dielectrophoresis force and torque, volatility, as well as toxicity, isopropanol (IPA) is considered as a proper candidate. By using the dielectrophoretic process, SiC NWs are aligned and NW thin films are prepared. The densities of the aligned SiC NWs are 2 μm-1, 4 μm-1, 6 μm-1, which corresponds to SiC NW concentrations of 0.1 μg/μL, 0.3 μg/μL and 0.5 μg/μL, respectively. Thin-film transistors are fabricated based on the aligned SiC NWs of 6 μm-1. The mobility of a typical device is estimated to be 13.4 cm2/(V·s).-
Keywords:
- dielectrophoresis,
- SiC nanowires,
- thin-film transistors
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References
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