SEMICONDUCTOR TECHNOLOGY

Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP

Wang Chenwei, Liu Yuling, Tian Jianying, Niu Xinhuan, Zheng Weiyan and Yue Hongwei

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Abstract: The chemical mechanical polishing/planarization (CMP) performance of an inhibitor-free alkaline copper slurry is investigated. The results of the Cu dissolution rate (DR) and the polish rate (PR) show that the alkaline slurry without inhibitors has a relatively high copper removal rate and considerable dissolution rate. Although the slurry with inhibitors has a somewhat low DR, the copper removal rate was significantly reduced due to the addition of inhibitors (Benzotriazole, BTA). The results obtained from pattern wafers show that the alkaline slurry without inhibitors has a better planarization efficacy; it can planarize the uneven patterned surface during the excess copper removal. These results indicate that the proposed inhibitor-free copper slurry has a considerable planarization capability for CMP of Cu pattern wafers, it can be applied in the first step of Cu CMP for copper bulk removal.

Key words: planarizationalkaline copper slurryinhibitor freecopper pattern wafer

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    Received: 21 August 2015 Revised: 24 May 2012 Online: Published: 01 November 2012

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      Wang Chenwei, Liu Yuling, Tian Jianying, Niu Xinhuan, Zheng Weiyan, Yue Hongwei. Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP[J]. Journal of Semiconductors, 2012, 33(11): 116001. doi: 10.1088/1674-4926/33/11/116001 Wang C W, Liu Y L, Tian J Y, Niu X H, Zheng W Y, Yue H W. Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP[J]. J. Semicond., 2012, 33(11): 116001. doi: 10.1088/1674-4926/33/11/116001.Export: BibTex EndNote
      Citation:
      Wang Chenwei, Liu Yuling, Tian Jianying, Niu Xinhuan, Zheng Weiyan, Yue Hongwei. Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP[J]. Journal of Semiconductors, 2012, 33(11): 116001. doi: 10.1088/1674-4926/33/11/116001

      Wang C W, Liu Y L, Tian J Y, Niu X H, Zheng W Y, Yue H W. Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP[J]. J. Semicond., 2012, 33(11): 116001. doi: 10.1088/1674-4926/33/11/116001.
      Export: BibTex EndNote

      Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP

      doi: 10.1088/1674-4926/33/11/116001
      Funds:

      Major national science and technology special projects (2009ZX02308) and Tianjin Natural Science Foundation of China (10JCZDJC15500), Natural Science Foundation of China (10676008),Fund Project of Hebei Provincial Department of Education (2011128)

      • Received Date: 2015-08-21
      • Accepted Date: 2012-04-16
      • Revised Date: 2012-05-24
      • Published Date: 2012-10-23

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