| Citation: |
Hu Hao, Chen Xingbi. A novel high speed lateral IGBT with a self-driven second gate[J]. Journal of Semiconductors, 2012, 33(3): 034004. doi: 10.1088/1674-4926/33/3/034004
Hu H, Chen X B. A novel high speed lateral IGBT with a self-driven second gate[J]. J. Semicond., 2012, 33(3): 034004. doi: 10.1088/1674-4926/33/3/034004.
Export: BibTex EndNote
|
A novel high speed lateral IGBT with a self-driven second gate
doi: 10.1088/1674-4926/33/3/034004
-
Abstract
A novel lateral IGBT with a second gate on the emitter portion is presented. A PMOS transistor, driven by the proposed device itself, is used to short the PN junction at the emitter while turned off. Low on state voltage and fast turn off speed are obtained without side-effects such as snapback I-V characteristics and difficulties of process complexity. Numerical simulation results show a drop of fall time from 120 to 12 ns and no increase of on state voltage.-
Keywords:
- lateral IGBT
-
References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] -
Proportional views
DownLoad: