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Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT

Zhang Ying, Wang Zhigong, Xu Jian and Luo Yin

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Abstract: A low noise distributed amplifier consisting of 9 gain cells is presented. The chip is fabricated with 0.15-μm GaAs pseudomorphic high electron mobility transistor (PHEMT) technology from Win Semiconductor of Taiwan. A special optional gate bias technique is introduced to allow an adjustable gain control range of 10 dB. A novel cascode structure is adopted to extend the output voltage and bandwidth. The measurement results show that the amplifier gives an average gain of 15 dB with a gain flatness of ±1 dB in the 2-20 GHz band. The noise figure is between 2 and 4.1 dB during the band from 2 to 20 GHz. The amplifier also provides 13.8 dBm of output power at a 1 dB gain compression point and 10.5 dBm of input third order intercept point (IIP3), which demonstrates the excellent performance of linearity. The power consumption is 300 mW with a supply of 5 V, and the chip area is 2.36 × 1.01 mm2.

Key words: distributed amplifierslow noiseadjustable gain controlGaAs PHEMT

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    Received: 20 August 2015 Revised: 01 November 2011 Online: Published: 01 March 2012

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      Zhang Ying, Wang Zhigong, Xu Jian, Luo Yin. Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT[J]. Journal of Semiconductors, 2012, 33(3): 035003. doi: 10.1088/1674-4926/33/3/035003 Zhang Y, Wang Z G, Xu J, Luo Y. Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT[J]. J. Semicond., 2012, 33(3): 035003. doi: 10.1088/1674-4926/33/3/035003.Export: BibTex EndNote
      Citation:
      Zhang Ying, Wang Zhigong, Xu Jian, Luo Yin. Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT[J]. Journal of Semiconductors, 2012, 33(3): 035003. doi: 10.1088/1674-4926/33/3/035003

      Zhang Y, Wang Z G, Xu J, Luo Y. Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT[J]. J. Semicond., 2012, 33(3): 035003. doi: 10.1088/1674-4926/33/3/035003.
      Export: BibTex EndNote

      Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT

      doi: 10.1088/1674-4926/33/3/035003
      Funds:

      China postdoctoral science foundation,Jiangsu postdoctoral science foundation,Innovation Fund of Ministry of Science & Technology for small and medium sized enterprises

      • Received Date: 2015-08-20
      • Accepted Date: 2011-07-19
      • Revised Date: 2011-11-01
      • Published Date: 2012-02-20

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