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Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy

Zhang Guangchen, Feng Shiwei, Li Jingwan, Zhao Yan and Guo Chunsheng

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Abstract: Channel temperature determinations of AlGaN/GaN high electron mobility transistors (HEMTs) by high spectral resolution micro-Raman spectroscopy are proposed. The temperature dependence of the E2 phonon frequency of GaN material is calibrated by using a JYT-64000 micro-Raman system. By using the Lorentz fitting method, the measurement uncertainty for the Raman phonon frequency of ±0.035 cm-1 is achieved, corresponding to a temperature accuracy of ±3.2℃ for GaN material, which is the highest temperature resolution in the published works. The thermal resistance of the tested AlGaN/GaN HEMT sample is 22.8℃/W, which is in reasonably good agreement with a three dimensional heat conduction simulation. The difference among the channel temperatures obtained by micro-Raman spectroscopy, the pulsed electrical method and the infrared image method are also investigated quantificationally.

Key words: HEMT

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    Received: 20 August 2015 Revised: 27 October 2011 Online: Published: 01 April 2012

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      Zhang Guangchen, Feng Shiwei, Li Jingwan, Zhao Yan, Guo Chunsheng. Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy[J]. Journal of Semiconductors, 2012, 33(4): 044003. doi: 10.1088/1674-4926/33/4/044003 Zhang G C, Feng S W, Li J W, Zhao Y, Guo C S. Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy[J]. J. Semicond., 2012, 33(4): 044003. doi: 10.1088/1674-4926/33/4/044003.Export: BibTex EndNote
      Citation:
      Zhang Guangchen, Feng Shiwei, Li Jingwan, Zhao Yan, Guo Chunsheng. Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy[J]. Journal of Semiconductors, 2012, 33(4): 044003. doi: 10.1088/1674-4926/33/4/044003

      Zhang G C, Feng S W, Li J W, Zhao Y, Guo C S. Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy[J]. J. Semicond., 2012, 33(4): 044003. doi: 10.1088/1674-4926/33/4/044003.
      Export: BibTex EndNote

      Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy

      doi: 10.1088/1674-4926/33/4/044003
      Funds:

      Beijing Municipal Nature Science Fund(No.4092005),the High-tech Research and Development Program of P.R. China (863 program)(No.2009AA032704),the Research Fund for Doctoral Program of Ministry of Education, P.R. China(No.20091103110006)

      • Received Date: 2015-08-20
      • Accepted Date: 2011-09-23
      • Revised Date: 2011-10-27
      • Published Date: 2012-03-23

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