SEMICONDUCTOR DEVICES

GaN based transfer electron and avalanche transit time devices

R. K. Parida and A. K. Panda

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Abstract: A new model is developed to study the microwave/mm wave characteristics of two-terminal GaN-based transfer electron devices (TEDs), namely a Gunn diode and an impact avalanche transit time (IMPATT) device. Microwave characteristics such as device efficiency and the microwave power generated are computed and compared at D-band (140 GHz center frequency) to see the potentiality of each device under the same operating conditions. It is seen that GaN-based IMPATT devices surpass the Gunn diode in the said frequency region.

Key words: GaNtransfer electron deviceavalanche transit time device

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    Received: 03 December 2014 Revised: 15 December 2011 Online: Published: 01 May 2012

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      R. K. Parida, A. K. Panda. GaN based transfer electron and avalanche transit time devices[J]. Journal of Semiconductors, 2012, 33(5): 054001. doi: 10.1088/1674-4926/33/5/054001 R. K. Parida, A. K. Panda. GaN based transfer electron and avalanche transit time devices[J]. J. Semicond., 2012, 33(5): 054001. doi: 10.1088/1674-4926/33/5/054001.Export: BibTex EndNote
      Citation:
      R. K. Parida, A. K. Panda. GaN based transfer electron and avalanche transit time devices[J]. Journal of Semiconductors, 2012, 33(5): 054001. doi: 10.1088/1674-4926/33/5/054001

      R. K. Parida, A. K. Panda. GaN based transfer electron and avalanche transit time devices[J]. J. Semicond., 2012, 33(5): 054001. doi: 10.1088/1674-4926/33/5/054001.
      Export: BibTex EndNote

      GaN based transfer electron and avalanche transit time devices

      doi: 10.1088/1674-4926/33/5/054001
      • Received Date: 2014-12-03
      • Accepted Date: 2011-10-28
      • Revised Date: 2011-12-15
      • Published Date: 2012-04-11

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