Abstract: This study investigated the resistive switching characteristics of the Ni/HfO₂/Pt structure for nonvolatile memory application. The Ni/HfO₂/Pt device showed bipolar resistive switching (RS) without a forming process, and the formation and rupture of conducting filaments are responsible for the resistive switching phenomenon. In addition, the device showed some excellent memory performances, including a large on/off ratio (> 3×10⁵), very good data retention (> 10³ s @ 200 ℃) and uniformity of switching parameters. Considering these results, the Ni/HfO₂/Pt device has the potential for nonvolatile memory applications.

Key words: resistive random access memory, programmable metallization cell, conductive filament, Ni electrode, HfO₂