J. Semicond. > 2012, Volume 33 > Issue 7 > 073002, doi: 10.1088/1674-4926/33/7/073002
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SEMICONDUCTOR MATERIALS

Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

Tao Zhikuo, Zhang Rong, Xiu Xiangqian, Cui Xugao, Li Li, Li Xin, Xie ZiLi, Zheng Youdou, Zheng Rongkun and Simon P Ringer

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Abstract: We have grown transition metal (Fe, Mn) doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion concentrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe3N clusters are observed with Fe3N (0002) parallel to GaN (0002) while for Mn over-doped GaN, hexagonal Mn6N2.58 phases are observed with Mn6N2.58(0002) parallel to GaN (0002). In addition, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt of GaN (0002) planes. The magnetization of the Fe over-doped GaN sample is increased, which is ascribed to the participation of ferromagnetic iron and Fe3N. The Mn over-doped sample displays very weak ferromagnetic behavior, which probably originates from the Mn6N2.58.

Key words: MOCVD

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    Received: 20 August 2015 Revised: 27 February 2012 Online: Published: 01 July 2012

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      Article Navigation >  Journal of Semiconductors  > 2012  >  33(7): 073002
      Tao Zhikuo, Zhang Rong, Xiu Xiangqian, Cui Xugao, Li Li, Li Xin, Xie ZiLi, Zheng Youdou, Zheng Rongkun, Simon P Ringer. Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD[J]. Journal of Semiconductors, 2012, 33(7): 073002. doi: 10.1088/1674-4926/33/7/073002 Tao Z K, Zhang R, Xiu X Q, Cui X G, Li L, Li X, Xie Z L, Zheng Y D, Zheng R K, S P Ringer. Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD[J]. J. Semicond., 2012, 33(7): 073002. doi:  10.1088/1674-4926/33/7/073002.Export: BibTex EndNote
      Citation:
      Tao Zhikuo, Zhang Rong, Xiu Xiangqian, Cui Xugao, Li Li, Li Xin, Xie ZiLi, Zheng Youdou, Zheng Rongkun, Simon P Ringer. Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD[J]. Journal of Semiconductors, 2012, 33(7): 073002. doi: 10.1088/1674-4926/33/7/073002

      Tao Z K, Zhang R, Xiu X Q, Cui X G, Li L, Li X, Xie Z L, Zheng Y D, Zheng R K, S P Ringer. Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD[J]. J. Semicond., 2012, 33(7): 073002. doi:  10.1088/1674-4926/33/7/073002.
      Export: BibTex EndNote
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      Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

      doi: 10.1088/1674-4926/33/7/073002

      • Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

      • College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

      • Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

      • Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

      • Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

      • Australia Key Center for Microscopy and Microanalysis, University of Sydney, Sydney, NSW 2006, Australia

      • Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

      • Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

      • College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

      • Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

      • Australia Key Center for Microscopy and Microanalysis, University of Sydney, Sydney, NSW 2006, Australia

      • Australia Key Center for Microscopy and Microanalysis, University of Sydney, Sydney, NSW 2006, Australia

      • Received Date: 2015-08-20
      • Accepted Date: 2012-01-30
      • Revised Date: 2012-02-27
      • Published Date: 2012-06-27

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