| Citation: |
Jia Baoshan, Wang Yunhua, Zhou Lu, Bai Duanyuan, Qiao Zhongliang, Gao Xin, Bo Baoxue. Influence of sputtering pressure on optical constants of a-GaAs1-xNx thin films[J]. Journal of Semiconductors, 2012, 33(8): 083002. doi: 10.1088/1674-4926/33/8/083002
Jia B S, Wang Y H, Zhou L, Bai D Y, Qiao Z L, Gao X, Bo B X. Influence of sputtering pressure on optical constants of a-GaAs1-xNx thin films[J]. J. Semicond., 2012, 33(8): 083002. doi: 10.1088/1674-4926/33/8/083002.
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Influence of sputtering pressure on optical constants of a-GaAs1-xNx thin films
doi: 10.1088/1674-4926/33/8/083002
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Abstract
Amorphous GaAs1-xNx (a-GaAs1-xNx) thin films have been deposited at room temperature by a reactive magnetron sputtering technique on glass substrates with different sputtering pressures. The thickness, nitrogen content, carrier concentration and transmittance of the as-deposited films were determined experimentally. The influence of sputtering pressure on the optical band gap, refractive index and dispersion parameters (Eo, Ed) has been investigated. An analysis of the absorption coefficient revealed a direct optical transition characterizing the as-deposited films. The refractive index dispersions of the as-deposited a-GaAs1-xNx films fitted well to the Cauchy dispersion relation and the Wemple model.-
Keywords:
- a-GaAs1-xNx thin films
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References
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