| Citation: |
R K Parida, N C Agrawala, G N Dash, A K Panda. Characteristics of a GaN-based Gunn diode for THz signal generation[J]. Journal of Semiconductors, 2012, 33(8): 084001. doi: 10.1088/1674-4926/33/8/084001
R K Parida, N C Agrawala, G N Dash, A K Panda. Characteristics of a GaN-based Gunn diode for THz signal generation[J]. J. Semicond., 2012, 33(8): 084001. doi: 10.1088/1674-4926/33/8/084001.
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Characteristics of a GaN-based Gunn diode for THz signal generation
doi: 10.1088/1674-4926/33/8/084001
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Abstract
A generalized large-signal computer simulation program for a Gunn oscillator has been developed. The properties of a Gunn diode oscillator based on the widely explored GaN, are investigated using the developed program. The results show some interesting properties in GaN Gunn diodes which are not seen in GaAs and InP diodes. An output power of 1400 kW/cm2 is achieved from the GaN Gunn diode, as compared to 4.9 kW/cm2 from a GaAs diode.-
Keywords:
- Gunn devices,
- semiconductor diodes,
- semiconductor materials,
- power,
- GaN
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] -
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