| Citation: |
Dai Zhenqing, Chen Changxin, Zhang Yaozhong, Wei Liangming, Zhang Jing, Xu Dong, Zhang Yafei. ZnO nanowire network transistors based on a self-assembly method[J]. Journal of Semiconductors, 2012, 33(8): 084003. doi: 10.1088/1674-4926/33/8/084003
Dai Z Q, Chen C X, Zhang Y Z, Wei L M, Zhang J, Xu D, Zhang Y F. ZnO nanowire network transistors based on a self-assembly method[J]. J. Semicond., 2012, 33(8): 084003. doi: 10.1088/1674-4926/33/8/084003.
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ZnO nanowire network transistors based on a self-assembly method
doi: 10.1088/1674-4926/33/8/084003
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Abstract
Dense, uniform ZnO nanowire (NW) networks are prepared by using a simple and sufficient self-assembly method. In this method, ZnO NWs are modified with aminopropyltriethoxysilane (APTES) to form positively charged amine-terminated surfaces. The modified ZnO NWs are adsorbed on negatively charged SiO2/Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution. Field-effect transistors (FETs) are fabricated and studied based on the ZnO NW networks. For a typical device with an NW density of 2.8 μm-2, it exhibits a current on/off ratio of 2.4 × 105, a transconductance of 336 nS, and a field-effect mobility of 27.4 cm2/(V·s). -
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