| Citation: |
He Ran, Wang Huijuan, Yu Daquan, Zhou Jing, Dai Fengwei, Song Chongshen, Sun Yu, Wan Lixi. High-speed through-silicon via filling method using Cu-cored solder balls[J]. Journal of Semiconductors, 2012, 33(8): 086002. doi: 10.1088/1674-4926/33/8/086002
He R, Wang H J, Yu D Q, Zhou J, Dai F W, Song C S, Sun Y, Wan L X. High-speed through-silicon via filling method using Cu-cored solder balls[J]. J. Semicond., 2012, 33(8): 086002. doi: 10.1088/1674-4926/33/8/086002.
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High-speed through-silicon via filling method using Cu-cored solder balls
doi: 10.1088/1674-4926/33/8/086002
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Abstract
A novel low-cost and high-speed via filling method using Cu-cored solder balls was investigated for through-silicon via manufacture. Cu-cored solder balls with a total diameter of 100 μm were used to fill 150 μm deep, 110 μm wide vias in silicon. The wafer-level filling process can be completed in a few seconds, which is much faster than using the traditional electroplating process. Thermo-mechanical analysis of via filling using solder, Cu and Cu-cored solder was carried out to assess the thermo-mechanical properties of the different filling materials. It was found that the vias filled with Cu-cored solder exhibit less thermal-mechanical stresses than solder-filled vias, but more than Cu-filled vias. -
References
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