Calculation of surface acoustic waves in a multilayered piezoelectric structure

Zuwei Zhang; Zhiyu Wen; Jing Hu

doi:10.1088/1674-4926/34/1/012002

J. Semicond. > 2013, Volume 34 > Issue 1 > 012002, doi: 10.1088/1674-4926/34/1/012002

SEMICONDUCTOR PHYSICS

Calculation of surface acoustic waves in a multilayered piezoelectric structure

Zuwei Zhang^{1, 2, 3,}, Zhiyu Wen^{1, 2, 3} and Jing Hu^{1, 2, 3}

+ Author Affiliations

Corresponding author: Zhang Zuwei, Email:zhangzuwei00@163.com

Abstract: The propagation properties of the surface acoustic waves (SAWs) in a ZnO-SiO₂-Si multilayered piezoelectric structure are calculated by using the recursive asymptotic method. The phase velocities and the electro-mechanical coupling coefficients for the Rayleigh wave and the Love wave in the different ZnO-SiO₂-Si structures are calculated and analyzed. The Love mode wave is found to be predominantly generated since the c-axis of the ZnO film is generally perpendicular to the substrate. In order to prove the calculated results, a Love mode SAW device based on the ZnO-SiO₂-Si multilayered structure is fabricated by micromachining, and its frequency responses are detected. The experimental results are found to be mainly consistent with the calculated ones, except for the slightly larger velocities induced by the residual stresses produced in the fabrication process of the films. The deviation of the experimental results from the calculated ones is reduced by thermal annealing.

Key words: SAW, RAM, multilayered structure

References

[1]	Fu Y Q, Luo J K, Du X Y, et al. Recent developments on ZnO films for acoustic wave based bio-sensing and microfluidic applications:a review. Sensors and Actuators B:Chemical, 2010, 143:606 doi: 10.1016/j.snb.2009.10.010
[2]	Krishnamoorthy S, Iliadis A A. Properties of high sensitivity ZnO surface acoustic wave sensorson SiO₂/(100) Si substrates. Solid-State Electron, 2008, 52:1710 doi: 10.1016/j.sse.2008.06.039
[3]	Horrillo M C, Fernandez M J, Fontecha J L, et al. Optimization of SAW sensors with a structure ZnO-SiO₂-Si to detect volatile organic compounds. Sensors and Actuators B:Chemical, 2006, 118:356 doi: 10.1016/j.snb.2006.04.050
[4]	Krishnamoorthy S, Iliadis A A, Beic T, et al. An interleukin-6 ZnO/SiO₂/Si surface acoustic wave biosensor. Biosensor and Bioelectronics, 2008, 24:313 doi: 10.1016/j.bios.2008.04.011
[5]	Adler E L. Matrix method applied to acoustic waves in multilayers. IEEE Trans Ultrasonics, Ferroelectrics, and Frequency Control, 1990, 37:485 doi: 10.1109/58.63103
[6]	Rokhlin S I, Wang L. Ultrasonic waves in layered anisotropic media:characterization of multidirectional composites. International Journal of Solids and Structures, 2002, 39:5529 doi: 10.1016/S0020-7683(02)00500-0
[7]	Wang L, Rokhlin S I. A compliance/stiffness matrix formulation of general Green's function and effective permittivity for piezoelectric multilayers. IEEE Trans Ultrasonics, Ferroelectrics, and Frequency Control, 2004, 51:453 doi: 10.1109/TUFFC.2004.1295431
[8]	Wang L, Rokhlin S I. Modeling of wave propagation in layered piezoelectric media by a recursive asymptotic method. IEEE Trans Ultrasonics, Ferroelectrics, and Frequency Control, 2004, 51:1060 doi: 10.1109/TUFFC.2004.1334839
[9]	Fahmy A H, Adler E L. Propagation of acoustic waves in multilayers:a matrix description. Appl Phys Lett, 1973, 20:495
[10]	Nakahata H, Hachigo A, Higaki K, et al. Theoretical study on SAW characteristics of layered structures including a diamond layer. IEEE Trans Ultrasonics, Ferroelectrics, and Frequency Control, 1995, 2:362
[11]	Vispute R D, Talyansky V, Trajanovic Z, et al. High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for Ⅲ-Ⅴ nitrides. Appl Phys Lett, 1997, 70:2735 doi: 10.1063/1.119006
[12]	Krishnamoorthy S, Iliadis A A. Development of high frequency ZnO/SiO₂/Si Love mode surface acoustic wave devices. Solid-State Electron, 2006, 50:1113 doi: 10.1016/j.sse.2006.04.033

Fig. 1. Schematic of the ZnO–SiO$_{2}$–Si multilayered structure.

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Fig. 2. Calculated $H_{\rm ZnO}/\lambda$ dependence of phase velocity for a Rayleigh wave in a ZnO–SiO$_{2}$–Si structure when $H_{\rm ZnO}$ is set to be 3 $\mu$m and $H_{\rm SiO_2}$ is set to range from 2 to 10 $\mu $m.

DownLoad: Full-Size Img PowerPoint

Fig. 3. Calculated $H_{\rm ZnO}/\lambda$ dependence of electromechanical coupling coefficients for a Rayleigh wave in ZnO–SiO$_{2}$–Si structure when $H_{\rm ZnO} $ is set to be 3 $\mu$m and $H_{\rm SiO_2}$ is set to range from 2 to 10 $\mu$m.

DownLoad: Full-Size Img PowerPoint

Fig. 4. Calculated $H_{\rm SiO_2}/\lambda$ dependence of phase velocity for the Rayleigh wave in a ZnO–SiO$_{2}$–Si structure when $H_{\rm SiO_2}$ is set to be 2 $\mu$m and $H_{\rm ZnO}$ is set to range from 3 to 10 $\mu$m.

DownLoad: Full-Size Img PowerPoint

Fig. 5. Calculated $H_{\rm SiO_2}/\lambda$ dependence of electromechanical coupling coefficients for the Rayleigh wave in a ZnO–SiO$_{2}$–Si structure when $H_{\rm SiO_2}$ is set to be 2 $\mu$m and $H_{\rm ZnO}$ is set to range from 3 to 10 $\mu$m.

DownLoad: Full-Size Img PowerPoint

Fig. 6. Calculated $H_{\rm ZnO}/\lambda$ dependence of phase velocity for the Love wave in a ZnO–SiO$_{2}$–Si structure when $H_{\rm ZnO}$ is set to be 3 $\mu$m and $H_{\rm SiO_2}$ is set to range from 2 to 10 $\mu$m.

DownLoad: Full-Size Img PowerPoint

Fig. 7. Calculated $H_{\rm ZnO}/\lambda$ dependence of electromechanical coupling coefficients for the Love wave in a ZnO–SiO$_{2}$–Si structure when $H_{\rm ZnO}$ is set to be 3 $\mu$m and $H_{\rm SiO_2}$ is set to range from 2 to 10 $\mu$m.

DownLoad: Full-Size Img PowerPoint

Fig. 8. Calculated $H_{\rm SiO_2}/\lambda$ dependence of phase velocity for the Love wave in a ZnO–SiO$_{2}$–Si structure when $H_{\rm SiO_2}$ is set to be 2 $\mu$m and $H_{\rm ZnO}$ is set to range from 3 to 10 $\mu $m.

DownLoad: Full-Size Img PowerPoint

Fig. 9. Calculated $H_{\rm SiO_2}/\lambda$ dependence of electromechanical coupling coefficients for the Love wave in a ZnO–SiO$_{2}$–Si structure when $H_{\rm SiO_2}$ is set to be 2 $\mu$m and $H_{\rm ZnO} $ is set to range from 3 to 10 $\mu$m.

DownLoad: Full-Size Img PowerPoint

Fig. 10. XRD pattern of the ZnO film.

DownLoad: Full-Size Img PowerPoint

Fig. 11. Pictures of the fabricated SAW device.

DownLoad: Full-Size Img PowerPoint

Fig. 12. Frequency responses of the device (a) before and (b) after annealing.

DownLoad: Full-Size Img PowerPoint

Table 1. Material properties of the layers.

Table 2. Properties of the fabricated Love mode device.

[1]	Fu Y Q, Luo J K, Du X Y, et al. Recent developments on ZnO films for acoustic wave based bio-sensing and microfluidic applications:a review. Sensors and Actuators B:Chemical, 2010, 143:606 doi: 10.1016/j.snb.2009.10.010
[2]	Krishnamoorthy S, Iliadis A A. Properties of high sensitivity ZnO surface acoustic wave sensorson SiO₂/(100) Si substrates. Solid-State Electron, 2008, 52:1710 doi: 10.1016/j.sse.2008.06.039
[3]	Horrillo M C, Fernandez M J, Fontecha J L, et al. Optimization of SAW sensors with a structure ZnO-SiO₂-Si to detect volatile organic compounds. Sensors and Actuators B:Chemical, 2006, 118:356 doi: 10.1016/j.snb.2006.04.050
[4]	Krishnamoorthy S, Iliadis A A, Beic T, et al. An interleukin-6 ZnO/SiO₂/Si surface acoustic wave biosensor. Biosensor and Bioelectronics, 2008, 24:313 doi: 10.1016/j.bios.2008.04.011
[5]	Adler E L. Matrix method applied to acoustic waves in multilayers. IEEE Trans Ultrasonics, Ferroelectrics, and Frequency Control, 1990, 37:485 doi: 10.1109/58.63103
[6]	Rokhlin S I, Wang L. Ultrasonic waves in layered anisotropic media:characterization of multidirectional composites. International Journal of Solids and Structures, 2002, 39:5529 doi: 10.1016/S0020-7683(02)00500-0
[7]	Wang L, Rokhlin S I. A compliance/stiffness matrix formulation of general Green's function and effective permittivity for piezoelectric multilayers. IEEE Trans Ultrasonics, Ferroelectrics, and Frequency Control, 2004, 51:453 doi: 10.1109/TUFFC.2004.1295431
[8]	Wang L, Rokhlin S I. Modeling of wave propagation in layered piezoelectric media by a recursive asymptotic method. IEEE Trans Ultrasonics, Ferroelectrics, and Frequency Control, 2004, 51:1060 doi: 10.1109/TUFFC.2004.1334839
[9]	Fahmy A H, Adler E L. Propagation of acoustic waves in multilayers:a matrix description. Appl Phys Lett, 1973, 20:495
[10]	Nakahata H, Hachigo A, Higaki K, et al. Theoretical study on SAW characteristics of layered structures including a diamond layer. IEEE Trans Ultrasonics, Ferroelectrics, and Frequency Control, 1995, 2:362
[11]	Vispute R D, Talyansky V, Trajanovic Z, et al. High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for Ⅲ-Ⅴ nitrides. Appl Phys Lett, 1997, 70:2735 doi: 10.1063/1.119006
[12]	Krishnamoorthy S, Iliadis A A. Development of high frequency ZnO/SiO₂/Si Love mode surface acoustic wave devices. Solid-State Electron, 2006, 50:1113 doi: 10.1016/j.sse.2006.04.033

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Received: 27 May 2012 Revised: 16 July 2012 Online: Published: 01 January 2013

The propagation properties of the surface acoustic waves (SAWs) in a ZnO-SiO₂-Si multilayered piezoelectric structure are calculated by using the recursive asymptotic method. The phase velocities and the electro-mechanical coupling coefficients for the Rayleigh wave and the Love wave in the different ZnO-SiO₂-Si structures are calculated and analyzed. The Love mode wave is found to be predominantly generated since the c-axis of the ZnO film is generally perpendicular to the substrate. In order to prove the calculated results, a Love mode SAW device based on the ZnO-SiO₂-Si multilayered structure is fabricated by micromachining, and its frequency responses are detected. The experimental results are found to be mainly consistent with the calculated ones, except for the slightly larger velocities induced by the residual stresses produced in the fabrication process of the films. The deviation of the experimental results from the calculated ones is reduced by thermal annealing.

Calculation of surface acoustic waves in a multilayered piezoelectric structure

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