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The corner rounding modeling technique in SPICE simulations for deeply scaled MOSFETs

Wei Sun1, 2, and Dake Yang1, 2

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 Corresponding author: Sun Wei, Email:1974623728@99.com

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Abstract: This paper presents a novel poly (PC) and active (RX) corner rounding modeling approach to SPICE simulations. A set of specially designed structures was used for measurement data collection. PC and RX corner rounding equations have been derived based on an assumption that the corner rounding area is a fragment of a circle. The equations were modified to reflect the gouging effect of physical silicon wafers. The modified general equations were implemented in the SPICE model to enable the model to describe the corner rounding effect. The good fittings between the SPICE model simulation results and the silicon data demonstrated in this paper proved that the designed corner rounding model is practical and accurate.

Key words: SPICE modelMOSFETspoly and activecorner roundingnanometer technology



[1]
Rozvany G I N, Obieszczanski-Sobieski J S. New optimality criteria methods:forcing uniqueness of the adjoint strains by corner-rounding at constraint intersections. Structural Optimization, 1992, 4:244 doi: 10.1007/BF01742752
[2]
Sobieszczansld-Sobiesld J. A technique for locating function roots and for satisfying equality constraints in optimization. Structural Optimization, 1992, 4:241 doi: 10.1007/BF01742751
[3]
Arora S, Karger D, Karpinski M. Polynomial-time approximation schemes dense instances of NP-hard optimization problems. J Computer Syst Sci, 1999, 58(1):193 doi: 10.1006/jcss.1998.1605
[4]
Rolim J D P, Trevisan L. A case study of de-randomization methods for combinatorial approximation problems. Journal of Combinatorial Optimization, 1998, 2(3):219 doi: 10.1023/A:1009793909670
[5]
Afrati F, Bampis E, Chekuri C. Approximation schemes for minimizing average weighted completion time with release dates. Proceedings of the 40th IEEE FOCS, 1999:32
[6]
Xue J, Deng Z, Koo K, et al. Integrated mask and optics simulations for mask corner rounding effect in OPC modeling. Proc SPIE Photomask Technology, 2010, 7823:41
[7]
Lucas K, Postnikov S, Patterson K. Achieving the 90 nm lithography generation with model-based OPC. Future Fab International, 2002:13
[8]
Lucas K, Word J, Vandenbergh G. Model-based OPC for 1st generation 193 nm lithography. Proc SPIE, 2001:4346
[9]
Van Driessche V, Lucas K, van Roey F. 100 nm generation contact patterning by low temperature 193 nm resist reflow process. Proc SPIE, 2002:4690
Fig. 1.  Designed PC corner structures. Block is poly (PC), gray is active (RX), 113 is the minimum space between PC and RX. Both of the structures have 10 devices in parallel

Fig. 2.  1 PC corner $L_{\rm pccnr}$ calculation

Fig. 3.  2 PC corner $L_{\rm pccnr}$ calculation

Fig. 4.  dwc_pccnr calculation

Fig. 5.  (a) Cross section (X-SEM) of silicon corner rounding. (b) Modified structure with the circle cut into the gate edge

Fig. 6.  Data from modified equation matches X-SEM data well

Fig. 7.  (a) SPICE model with the PC corner rounding effect reflects the actual device performance. (b) SPICE model with the RX corner rounding effect reflects the actual device performance

[1]
Rozvany G I N, Obieszczanski-Sobieski J S. New optimality criteria methods:forcing uniqueness of the adjoint strains by corner-rounding at constraint intersections. Structural Optimization, 1992, 4:244 doi: 10.1007/BF01742752
[2]
Sobieszczansld-Sobiesld J. A technique for locating function roots and for satisfying equality constraints in optimization. Structural Optimization, 1992, 4:241 doi: 10.1007/BF01742751
[3]
Arora S, Karger D, Karpinski M. Polynomial-time approximation schemes dense instances of NP-hard optimization problems. J Computer Syst Sci, 1999, 58(1):193 doi: 10.1006/jcss.1998.1605
[4]
Rolim J D P, Trevisan L. A case study of de-randomization methods for combinatorial approximation problems. Journal of Combinatorial Optimization, 1998, 2(3):219 doi: 10.1023/A:1009793909670
[5]
Afrati F, Bampis E, Chekuri C. Approximation schemes for minimizing average weighted completion time with release dates. Proceedings of the 40th IEEE FOCS, 1999:32
[6]
Xue J, Deng Z, Koo K, et al. Integrated mask and optics simulations for mask corner rounding effect in OPC modeling. Proc SPIE Photomask Technology, 2010, 7823:41
[7]
Lucas K, Postnikov S, Patterson K. Achieving the 90 nm lithography generation with model-based OPC. Future Fab International, 2002:13
[8]
Lucas K, Word J, Vandenbergh G. Model-based OPC for 1st generation 193 nm lithography. Proc SPIE, 2001:4346
[9]
Van Driessche V, Lucas K, van Roey F. 100 nm generation contact patterning by low temperature 193 nm resist reflow process. Proc SPIE, 2002:4690
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    Received: 28 April 2013 Revised: 27 June 2013 Online: Published: 01 November 2013

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      Wei Sun, Dake Yang. The corner rounding modeling technique in SPICE simulations for deeply scaled MOSFETs[J]. Journal of Semiconductors, 2013, 34(11): 114008. doi: 10.1088/1674-4926/34/11/114008 W Sun, D K Yang. The corner rounding modeling technique in SPICE simulations for deeply scaled MOSFETs[J]. J. Semicond., 2013, 34(11): 114008. doi: 10.1088/1674-4926/34/11/114008.Export: BibTex EndNote
      Citation:
      Wei Sun, Dake Yang. The corner rounding modeling technique in SPICE simulations for deeply scaled MOSFETs[J]. Journal of Semiconductors, 2013, 34(11): 114008. doi: 10.1088/1674-4926/34/11/114008

      W Sun, D K Yang. The corner rounding modeling technique in SPICE simulations for deeply scaled MOSFETs[J]. J. Semicond., 2013, 34(11): 114008. doi: 10.1088/1674-4926/34/11/114008.
      Export: BibTex EndNote

      The corner rounding modeling technique in SPICE simulations for deeply scaled MOSFETs

      doi: 10.1088/1674-4926/34/11/114008
      Funds:

      the National Natural Science Foundation of China 61201104

      the State Key Development Program for Basic Research of China 2011CB933102

      Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CB933102, 2013YQ16055103) and the National Natural Science Foundation of China (Nos. 61234007, 61201104)

      the National Natural Science Foundation of China 61234007

      the State Key Development Program for Basic Research of China 2013YQ16055103

      More Information
      • Corresponding author: Sun Wei, Email:1974623728@99.com
      • Received Date: 2013-04-28
      • Revised Date: 2013-06-27
      • Published Date: 2013-11-01

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