Fig. 1.
Architecture of Rx.
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Siyuan He, Changhong Zhang, Liang Tao, Weifeng Zhang, Longyue Zeng, Wei Lü, Haijun Wu. A saw-less direct conversion long term evolution receiver with 25% duty-cycle LO in 130 nm CMOS technology[J]. Journal of Semiconductors, 2013, 34(3): 035002. doi: 10.1088/1674-4926/34/3/035002
S Y He, C H Zhang, L Tao, W F Zhang, L Y Zeng, W Lü, H J Wu. A saw-less direct conversion long term evolution receiver with 25% duty-cycle LO in 130 nm CMOS technology[J]. J. Semicond., 2013, 34(3): 035002. doi: 10.1088/1674-4926/34/3/035002.
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A saw-less direct conversion long term evolution receiver with 25% duty-cycle LO in 130 nm CMOS technology
doi: 10.1088/1674-4926/34/3/035002
More Information-
Abstract
A CMOS long-term evolution (LTE) direct convert receiver that eliminates the interstage SAW filter is presented. The receiver consists of a low noise variable gain transconductance amplifier (TCA), a quadrature passive current commutating mixer with a 25% duty-cycle LO, a trans-impedance amplifier (TIA), a 7th-order Chebyshev filter and programmable gain amplifiers (PGAs). A wide dynamic gain range is allocated in the RF and analog parts. A current commutating passive mixer with a 25% duty-cycle LO improves gain, noise, and linearity. An LPF based on a Tow-Thomas biquad suppresses out-of-band interference. Fabricated in a 0.13 μm CMOS process, the receiver chain achieves a 107 dB maximum voltage gain, 2.7 dB DSB NF (from PAD port), -11 dBm ⅡP3, and > +65 dBm ⅡP2 after calibration, 96 dB dynamic control range with 1 dB steps, less than 2% error vector magnitude (EVM) from 2.3 to 2.7 GHz. The total receiver (total I Q path) draws 89 mA from a 1.2-V LDO on chip supply.-
Keywords:
- RF CMOS,
- passive mixer,
- 25% duty-cycle,
- saw-less,
- noise figure,
- Chebyshev filter,
- LTE
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References
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