SEMICONDUCTOR MATERIALS

The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD

Shaoxin Zhu, Jianchang Yan, Jianping Zeng, Ning Zhang, Zhao Si, Peng Dong, Jinmin Li and Junxi Wang

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 Corresponding author: Zhu Shaoxin, Email:zhushaoxin@semi.ac.cn

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Abstract: The effect of periodic delta-doping and modulation-doping on high Al content n-AlxGa1-xN (x=0.55) epilayers grown by MOCVD has been investigated. Measured by XRD, AFM, contactless sheet resistance, and Hall-effect tests, δ-doped and modulation-doped n-AlxGa1-xN have better crystal quality, surface morphology and electrical properties as compared with uniformly-doped n-AlxGa1-xN. These improvements are attributed to the SiNx growth mask induced by δ-doping layers and the dislocation-blocking effect induced by both growth techniques. In addition, due to the broadened doping profile ascribed to enhanced dopant diffusion at high growth temperatures (1150℃) of n-Al0.55Ga0.45N, modulation-doped n-Al0.55Ga0.45N has similar properties as δ-doped n-Al0.55Ga0.45N.

Key words: n-AlxGa1-xNMOCVDδ-dopingmodulation-dopingdopants diffusion



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Fig. 1.  Schematic diagram of samples A, B and C.

Fig. 2.  (0002) XRD rocking curve of samples A, B and C, the FWHM is 349.8 arcsec, 276.8 arcsec, 256.5 arcsec, respectively.

Fig. 3.  AFM images over the 2 $\times$ 2 $\mu $m$^{2}$ scan of samples (a) A, (b) B and (c) C, respectively.

Fig. 4.  Sheet resistance and carrier density obtained by contactless sheet resistance measurement and Hall-effect measurement, respectively. For samples A, B, and C, sheet resistance: A 391, B 354, C 358 ($\Omega$/$\square$); carrier density: A 1.570 $\times$ 10$^{18}$, B 1.678 $\times$ 10$^{18}$, C 1.68 $\times$ 10$^{18}$ (cm$^{-3})$.

[1]
Khan A, Balakrishnan K, Katona T. Ultraviolet light-emitting diodes based on group three nitrides. Nature Photonics, 2008, 2:77 doi: 10.1038/nphoton.2007.293
[2]
Khan M A, Shatalov M, Maruska H P, et al. Ⅲ-nitride UV devices. Jpn J Appl Phys, 2005, 44(10):7191 doi: 10.1143/JJAP.44.7191
[3]
Pan Y B, Yang Z J, Chen Z T, et al. Reduction of threading edge dislocation density in n-type GaN by Si delta-doping. J Cryst Growth, 2006, 286:255 doi: 10.1016/j.jcrysgro.2005.09.015
[4]
Zheng Z, Chen Z, Xian Y, et al. Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers. Appl Phys Lett, 2011, 99:111109 doi: 10.1063/1.3637599
[5]
Kwon M K, Park I K, Baek S H, et al. Si delta doping in a GaN barrier layer of InGaN/GaN multiquantum well for an efficient ultraviolet light-emitting diode. J Appl Phys, 2005, 97:106109 doi: 10.1063/1.1904151
[6]
Harris J J, Clegg J B, Beall R B, et al. Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be:a comparative study. J Cryst Growth, 1991, 111:239 doi: 10.1016/0022-0248(91)90978-E
[7]
Contreras O, Ponce F A, Christen J. Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si. Appl Phys Lett, 2011, 81:4712
[8]
Lee K J, Shin E H, Lim K Y. Reduction of dislocations in GaN epilayers grown on Si(111) substrate using SixNy inserting layer. Appl Phys Lett, 2004, 8:1502
[9]
Li G, Jagadish C. Recent progress in delta-doping of Ⅲ-V semiconductors grown by metal organic vapour phase epitaxy. Solid-State Electron, 1997, 41:1207 doi: 10.1016/S0038-1101(97)00063-4
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    Received: 27 November 2012 Revised: 21 October 2013 Online: Published: 01 May 2013

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      Shaoxin Zhu, Jianchang Yan, Jianping Zeng, Ning Zhang, Zhao Si, Peng Dong, Jinmin Li, Junxi Wang. The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD[J]. Journal of Semiconductors, 2013, 34(5): 053004. doi: 10.1088/1674-4926/34/5/053004 S X Zhu, J C Yan, J P Zeng, N Zhang, Z Si, P Dong, J M Li, J X Wang. The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD[J]. J. Semicond., 2013, 34(5): 053004. doi: 10.1088/1674-4926/34/5/053004.Export: BibTex EndNote
      Citation:
      Shaoxin Zhu, Jianchang Yan, Jianping Zeng, Ning Zhang, Zhao Si, Peng Dong, Jinmin Li, Junxi Wang. The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD[J]. Journal of Semiconductors, 2013, 34(5): 053004. doi: 10.1088/1674-4926/34/5/053004

      S X Zhu, J C Yan, J P Zeng, N Zhang, Z Si, P Dong, J M Li, J X Wang. The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD[J]. J. Semicond., 2013, 34(5): 053004. doi: 10.1088/1674-4926/34/5/053004.
      Export: BibTex EndNote

      The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD

      doi: 10.1088/1674-4926/34/5/053004
      Funds:

      the National Natural Science Foundation of China 61006038

      the National High Technology Research and Development Program of China 2011AA03A111

      Project supported by the National High Technology Research and Development Program of China (No. 2011AA03A111) and the National Natural Science Foundation of China (No. 61006038)

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      • Corresponding author: Zhu Shaoxin, Email:zhushaoxin@semi.ac.cn
      • Received Date: 2012-11-27
      • Revised Date: 2013-10-21
      • Published Date: 2013-05-01

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