Fig. 1.
Equivalent circuit of the SBD.
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| Citation: |
Jingtao Zhou, Chengyue Yang, Ji Ge, Zhi Jin. Planar InP-based Schottky barrier diodes for terahertz applications[J]. Journal of Semiconductors, 2013, 34(6): 064003. doi: 10.1088/1674-4926/34/6/064003
J T Zhou, C Y Yang, J Ge, Z Jin. Planar InP-based Schottky barrier diodes for terahertz applications[J]. J. Semicond., 2013, 34(6): 064003. doi: 10.1088/1674-4926/34/6/064003.
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Planar InP-based Schottky barrier diodes for terahertz applications
doi: 10.1088/1674-4926/34/6/064003
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Abstract
Based on characteristics such as low barrier and high electron mobility of lattice matched In0.53Ga0.47 As layer, InP-based Schottky barrier diodes (SBDs) exhibit the superiorities in achieving a lower turn-on voltage and series resistance in comparison with GaAs ones. Planar InP-based SBDs have been developed in this paper. Measurements show that a low forward turn-on voltage of less than 0.2 V and a cutoff frequency of up to 3.4 THz have been achieved. The key factors of the diode such as series resistance and the zero-biased junction capacitance are measured to be 3.32 Ω and 9.1 fF, respectively. They are highly consistent with the calculated values. The performances of the InP-based SBDs in this work, such as low noise and low loss, are promising for applications in the terahertz mixer, multiplier and detector circuits.-
Keywords:
- Schottky barrier diodes,
- terahertz,
- cuttoff frequency
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References
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