Fig. 1.
Transfer characteristic of the GaN HEMT at $V_{\rm drain}$ $=$ 15 V.
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Liyuan Yang, Shan Ai, Yonghe Chen, Mengyi Cao, Kai Zhang, Xiaohua Ma, Yue Hao. A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors[J]. Journal of Semiconductors, 2013, 34(7): 074005. doi: 10.1088/1674-4926/34/7/074005
L Y Yang, S Ai, Y H Chen, M Y Cao, K Zhang, X H Ma, Y Hao. A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors[J]. J. Semicond., 2013, 34(7): 074005. doi: 10.1088/1674-4926/34/7/074005.
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A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors
doi: 10.1088/1674-4926/34/7/074005
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Abstract
Self-heating in multi-finger AlGaN/GaN high-electron-mobility transistors (HEMTs) is investigated by measurements and modeling of device junction temperature under steady-state operation. Measurements are carried out using micro-Raman scattering to obtain the detailed and accurate temperature distribution of the device. The device peak temperature corresponds to the high field region at the drain side of gate edge. The channel temperature of the device is modeled using a combined electro-thermal model considering 2DEG transport characteristics and the Joule heating power distribution. The results reveal excellent correlation to the micro-Raman measurements, validating our model for the design of better cooled structures. Furthermore, the influence of layout design on the channel temperature of multi-finger AlGaN/GaN HEMTs is studied using the proposed electro-thermal model, allowing for device optimization. -
References
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