SEMICONDUCTOR TECHNOLOGY

A new fabrication process for the SOI-based miniature electric field sensor

Wei Liu1, 2, , Pengfei Yang1, 2, Chunrong Peng1, Dongming Fang1 and Shanhong Xia1

+ Author Affiliations

 Corresponding author: Liu Wei, Email:lwgreat_2006@yahoo.com.cn; Xia Shanhong, shxia@mail.ie.ac.cn

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Abstract: This paper presents a new fabrication process for the SOI-based novel miniature electric field sensor. This new process uses polyimide film to release the SiO2 layer. Compared with the CO2 critical point release method, it significantly improves the device surface cleanliness and shortens the process flow. The impurity on the base layer is analyzed. The problem of peak and butterfly-type contamination occurring on the base layer of the SOI wafer during the DRIE process is discussed and solved by thickening the photoresist layer and coating with polyimide film twice. This new process could fabricate MEMS sensors and actuators such as SOI-based electric field sensors, gyroscopes, and micro mirrors and can be an alternative fabrication process compared to commercial SOIMUMPS fabrication processes.

Key words: electrostatic field sensorSOIsacrificial layer releasepolyimideDRIE



[1]
Peng Chunrong, Chen Xianxiang, Xia Shanhong. Electric field micro-sensor based on electrostatic comb-driven and differential detecting. Chinese Mechanical Engine, 2005, 16:171
[2]
Riehl P, Scott K, Muller R, et al, Electrostatic charge and field sensors based on micromechanical resonators. J Microelectromech Syst, 2003, 12(5):577 doi: 10.1109/JMEMS.2003.818066
[3]
Ye Chao, Chen Xianxiang, Peng Chunrong. Application of two thermal actuators in miniature electric field sensors. Chinese Journal of Semiconductors, 2006, 27(9):1572
[4]
Guo Xin, Peng Chunrong, Xia Shanhong. Some methods for preventing release stiction of MEFS. Instrument Technique and Sensor, 2009, supple:328
[5]
Yang Pengfei, Peng Chunrong, Xia Shanhong. Design and testing of a SOI electric-field microsensor. Journal of Electronics & Information Technology, 2011, 33(11):2771
[6]
Lee H S, Yoon J B. A simple and effective lift-off with positive Photoresist. J Micromechan Microeng, 2005, 15:2136 doi: 10.1088/0960-1317/15/11/020
[7]
Raccurt O, Tardif F, Arnaud d'Avitaya F, et al. Influence of liquid surface tension on stiction of SOI MEMS. J Micromechan Microeng, 2004, 14:1083 doi: 10.1088/0960-1317/14/7/031
[8]
Hui Yu, Jing Yupeng. Supercritical carbon dioxide process for releasing stuck cantilever beams. Journal of Semiconductors, 2010, 31(10):106001 doi: 10.1088/1674-4926/31/10/106001
[9]
Ashursta W R, Carraroa C, Maboudiana R, et al. Wafer level anti-stiction coatings for MEMS. Sensors and Actuators A, 2003, 104:213 doi: 10.1016/S0924-4247(03)00023-2
[10]
Xiao S Y, Che L F, Wang Y L. A novel fabrication process of MEMS devices on polyimide flexible substrates. Microelectron Eng, 2008, 85:452 doi: 10.1016/j.mee.2007.08.004
[11]
Alper S E, Azgin K, Akin T. A high-performance silicon-on-insulator MEMS gyroscope operating at atmospheric pressure. Sensors and Actuators A, 2007, 135:34 doi: 10.1016/j.sna.2006.06.043
[12]
Singh J, Teo J H S, Xu Y, et al. A two axes scanning SOI MEMS micromirror for endoscopic bioimaging. J Micromechan Microeng, 2008, 18:025001 doi: 10.1088/0960-1317/18/2/025001
[13]
Mukhopadhyay D, Dong J, Pengwang E. A SOI-MEMS-based 3-DOF planar parallel-kinematics nanopositioning stage. Sensors and Actuators A:Physical, 2008, 147:340 doi: 10.1016/j.sna.2008.04.018
[14]
Lin C W, Yang H A, Wang W C. Implementation of three-dimensional SOI-MEMS wafer-level packaging using through-wafer interconnections. J Micromechan Microeng, 2007, 17:1200 doi: 10.1088/0960-1317/17/6/014
Fig. 1.  Novel SOI-based miniature electric field sensor structure diagram.

Fig. 2.  SEM photograph of a SOI-based miniature electric field sensor

Fig. 3.  Main fabrication process of an SOI-based miniature electric field sensor.

Fig. 4.  Device surface of the SOI-based miniature electric field sensor released with two methods. (a) The device surface using polyimide as a protection layer after it was removed. (b) The device surface using photoresist as a protection layer after it was removed.

Fig. 5.  Contamination caused by Al reacting with the etching gas SF$_{6}$.

Fig. 6.  Broken SiO$_{2}$ film resulting in heat conduction oil impurity.

Fig. 7.  Electric field response of the SOI-based miniature electric field sensor.

Table 1.   Preparation steps for the CO$_{2}$ critical point drying method.

Table 2.   Percentage of elements contained in the impurity.

[1]
Peng Chunrong, Chen Xianxiang, Xia Shanhong. Electric field micro-sensor based on electrostatic comb-driven and differential detecting. Chinese Mechanical Engine, 2005, 16:171
[2]
Riehl P, Scott K, Muller R, et al, Electrostatic charge and field sensors based on micromechanical resonators. J Microelectromech Syst, 2003, 12(5):577 doi: 10.1109/JMEMS.2003.818066
[3]
Ye Chao, Chen Xianxiang, Peng Chunrong. Application of two thermal actuators in miniature electric field sensors. Chinese Journal of Semiconductors, 2006, 27(9):1572
[4]
Guo Xin, Peng Chunrong, Xia Shanhong. Some methods for preventing release stiction of MEFS. Instrument Technique and Sensor, 2009, supple:328
[5]
Yang Pengfei, Peng Chunrong, Xia Shanhong. Design and testing of a SOI electric-field microsensor. Journal of Electronics & Information Technology, 2011, 33(11):2771
[6]
Lee H S, Yoon J B. A simple and effective lift-off with positive Photoresist. J Micromechan Microeng, 2005, 15:2136 doi: 10.1088/0960-1317/15/11/020
[7]
Raccurt O, Tardif F, Arnaud d'Avitaya F, et al. Influence of liquid surface tension on stiction of SOI MEMS. J Micromechan Microeng, 2004, 14:1083 doi: 10.1088/0960-1317/14/7/031
[8]
Hui Yu, Jing Yupeng. Supercritical carbon dioxide process for releasing stuck cantilever beams. Journal of Semiconductors, 2010, 31(10):106001 doi: 10.1088/1674-4926/31/10/106001
[9]
Ashursta W R, Carraroa C, Maboudiana R, et al. Wafer level anti-stiction coatings for MEMS. Sensors and Actuators A, 2003, 104:213 doi: 10.1016/S0924-4247(03)00023-2
[10]
Xiao S Y, Che L F, Wang Y L. A novel fabrication process of MEMS devices on polyimide flexible substrates. Microelectron Eng, 2008, 85:452 doi: 10.1016/j.mee.2007.08.004
[11]
Alper S E, Azgin K, Akin T. A high-performance silicon-on-insulator MEMS gyroscope operating at atmospheric pressure. Sensors and Actuators A, 2007, 135:34 doi: 10.1016/j.sna.2006.06.043
[12]
Singh J, Teo J H S, Xu Y, et al. A two axes scanning SOI MEMS micromirror for endoscopic bioimaging. J Micromechan Microeng, 2008, 18:025001 doi: 10.1088/0960-1317/18/2/025001
[13]
Mukhopadhyay D, Dong J, Pengwang E. A SOI-MEMS-based 3-DOF planar parallel-kinematics nanopositioning stage. Sensors and Actuators A:Physical, 2008, 147:340 doi: 10.1016/j.sna.2008.04.018
[14]
Lin C W, Yang H A, Wang W C. Implementation of three-dimensional SOI-MEMS wafer-level packaging using through-wafer interconnections. J Micromechan Microeng, 2007, 17:1200 doi: 10.1088/0960-1317/17/6/014
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    Received: 17 January 2013 Revised: 29 March 2013 Online: Published: 01 August 2013

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      Wei Liu, Pengfei Yang, Chunrong Peng, Dongming Fang, Shanhong Xia. A new fabrication process for the SOI-based miniature electric field sensor[J]. Journal of Semiconductors, 2013, 34(8): 086005. doi: 10.1088/1674-4926/34/8/086005 W Liu, P F Yang, C R Peng, D M Fang, S H Xia. A new fabrication process for the SOI-based miniature electric field sensor[J]. J. Semicond., 2013, 34(8): 086005. doi: 10.1088/1674-4926/34/8/086005.Export: BibTex EndNote
      Citation:
      Wei Liu, Pengfei Yang, Chunrong Peng, Dongming Fang, Shanhong Xia. A new fabrication process for the SOI-based miniature electric field sensor[J]. Journal of Semiconductors, 2013, 34(8): 086005. doi: 10.1088/1674-4926/34/8/086005

      W Liu, P F Yang, C R Peng, D M Fang, S H Xia. A new fabrication process for the SOI-based miniature electric field sensor[J]. J. Semicond., 2013, 34(8): 086005. doi: 10.1088/1674-4926/34/8/086005.
      Export: BibTex EndNote

      A new fabrication process for the SOI-based miniature electric field sensor

      doi: 10.1088/1674-4926/34/8/086005
      Funds:

      the National Natural Science Foundation of China 61101049

      the National Natural Science Foundation of China 61201078

      Project supported by the National High Technology Research and Development Program of China (No. 2011AA040405) and the National Natural Science Foundation of China (Nos. 61101049, 61201078)

      the National High Technology Research and Development Program of China 2011AA040405

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      • Corresponding author: Liu Wei, Email:lwgreat_2006@yahoo.com.cn; Xia Shanhong, shxia@mail.ie.ac.cn
      • Received Date: 2013-01-17
      • Revised Date: 2013-03-29
      • Published Date: 2013-08-01

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