J. Semicond. > 2013, Volume 34 > Issue 9 > 094002, doi: 10.1088/1674-4926/34/9/094002
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SEMICONDUCTOR DEVICES

A surface-potential-based model for AlGaN/AlN/GaN HEMT

Jie Wang1, 2, Lingling Sun2, , Jun Liu2 and Mingzhu Zhou2

+ Author Affiliations

 Corresponding author: Hassan Kaatuzian, Email: sunll@hdu.edu.cn

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Abstract: A new surface-potential-based model for AlGaN/AlN/GaN high electron mobility transistor (HEMT) is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas (2DEG) and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN/AlN/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN/AlN/GaN HEMT are faithfully reproduced by the new model.

Key words: AlGaN/AlN/GaN HEMT, 2DEG, surface potential, polarization effects, mobility



[1]
Shen L, Heikman S, Moran B, et a1. AlGaN/AlN/GaN high power microwave HEMT. IEEE Electron Device Lett, 2001, 22(10):457 doi: 10.1109/55.954910
[2]
Smorchkova I P, Chen L, Mates T, et a1. AlN/GaN and (Al, Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular beam epitaxy. J Appl Phys, 2001, 90(10):5195 doi: 10.1007/s11431-010-3150-1
[3]
Gao J. RF and microwave modeling and measurement techniques for field effect transistors. Raleigh, NC:SciTech Publishing, Inc, 2010
[4]
Dunleavy L, Baylis C, Curtice W, et al. Modeling GaN:powerful but challenging. IEEE Microw Mag, 2010, 11(6):82 doi: 10.1109/MMM.2010.937735
[5]
Curtice W R. Nonlinear modeling of compound semiconductor HEMTs state of the art. IEEE MTT-S International Microwave Symposium Digest, 2010:1194 http://www.academia.edu/18065059/Physics-Based_Modeling_of_GaN_HEMTs
[6]
Statz H, Newman P, Smith I W. GaAs FET device and circuit simulation in SPICE. IEEE Trans Electron Devices, 1987, 34(2):160 doi: 10.1109/T-ED.1987.22902
[7]
Angelov I, Zirath H, Rosman N. A new empirical nonlinear model for HEMT and MESFET devices. Microwave Theory and Techniques, 1992, 40(12):2258 doi: 10.1109/22.179888
[8]
Leckey J G. A scalable X-parameter model for GaAs and GaN FETs. Microwave Integrated Circuits Conference (EuMIC), 2011:13 http://piers.org/piersproceedings/download.php?file=cGllcnMyMDEzVGFpcGVpfDNQOF8xMTk1LnBkZnwxMjEwMTkxMDE1MTk=
[9]
Sun G, Xu Y, Liang A. The study of nonlinear scattering functions and X-parameters. International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2010:1086 http://www.sciencedirect.com/science/article/pii/B9780126137606500334
[10]
Cheng X, Wang Y. A surface-potential-based compact model for AlGaN/GaN MODFETs. IEEE Trans Electron Devices, 2011, 58(2):448 doi: 10.1109/TED.2010.2089690
[11]
Liu J, Yu Z, Sun L. An accurate surface-potential-based large-signal model for HEMTs. The International Conference on Simulation of Semiconductor Processes and Devices, Denver, Colorado, USA, 2012 http://adsabs.harvard.edu/abs/2014JSemi..35c4010J
[12]
Xu Wenjie, Sun Lingling, Liu Jun. A continuous and analytical surface potential model for SOI LDMOS. Chinese Journal of Semiconductors, 2007, 28(11):1712 doi: 10.1007/978-90-481-3046-7_3
[13]
Aziz M A, El-Abd A. Theoretical study of' the charge control in AlGaN/GaN HEMTs. Proceedings of the Twenty Third National Radio Science Conference, 2006:1
[14]
Yu T H, Brennan K F. Theoretical study of a GaN/AlGaN high electron mobility transistor including a non-linear polarization model. IEEE Trans Electron Devices, 2003, 50(2):315 doi: 10.1109/TED.2002.808519
[15]
Wang J, Sun L, Liu J. A surface-potential-based compact core model for GaN HEMTs. Journal of Microwaves, 2012, 6(1):1 https://www.deepdyve.com/lp/institute-of-electrical-and-electronics-engineers/asm-hemt-compact-model-for-gan-hemts-F93tv70mDU
[16]
Parish G, Umana-Membreno G A, Jolley S M, et al. AlGaN/AlN/GaN high electron mobility transistors with improved carrier transport. Conference on Optoelectronic and Microelectronic Materials and Devices, 2004:29 https://communities.research.uwa.edu.au/vivo/individual/pub343334353739
[17]
Gildenblat G, Li X, Wu W, et al. PSP:an advanced surface-potential-based MOSFET model for circuit simulation. IEEE Trans Electron Devices, 2006, 53(9):1979 doi: 10.1109/TED.2005.881006
[18]
Schwierz F. An electron mobility model for wurtzite GaN. Solid-State Electron, 2005, 49:889 doi: 10.1016/j.sse.2005.03.006
Fig. 1.  The structure of the Al$_{0.3}$Ga$_{0.7}$N/AlN/GaN HEMT ($L_{\rm sd}$ $=$ 3 $\mu$m, $L_{\rm gs}$ $=$ 1 $\mu$m, $L_{\rm g}$ $=$ 1 $\mu$m).

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Fig. 2.  Schematic conduction band diagram of AlGaN/AlN/GaN HEMT.

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Fig. 3.  Scattering mechanisms limiting mobility in the Al$_{k}$Ga$_{1-k}$N/GaN 2DEG system.

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Fig. 4.  Transfer characteristics of new model (line) is compared with TCAD results (dot) and the previous model (symbol) for $V_{\rm ds}$ $=$ 1 V.

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Fig. 5.  Output characteristics of new model (line) is compared with TCAD results (dot) and the previous model (symbol) for $V_{\rm gs}$.

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Table 1.   GaN mobility related parameters.
[1]
Shen L, Heikman S, Moran B, et a1. AlGaN/AlN/GaN high power microwave HEMT. IEEE Electron Device Lett, 2001, 22(10):457 doi: 10.1109/55.954910
[2]
Smorchkova I P, Chen L, Mates T, et a1. AlN/GaN and (Al, Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular beam epitaxy. J Appl Phys, 2001, 90(10):5195 doi: 10.1007/s11431-010-3150-1
[3]
Gao J. RF and microwave modeling and measurement techniques for field effect transistors. Raleigh, NC:SciTech Publishing, Inc, 2010
[4]
Dunleavy L, Baylis C, Curtice W, et al. Modeling GaN:powerful but challenging. IEEE Microw Mag, 2010, 11(6):82 doi: 10.1109/MMM.2010.937735
[5]
Curtice W R. Nonlinear modeling of compound semiconductor HEMTs state of the art. IEEE MTT-S International Microwave Symposium Digest, 2010:1194 http://www.academia.edu/18065059/Physics-Based_Modeling_of_GaN_HEMTs
[6]
Statz H, Newman P, Smith I W. GaAs FET device and circuit simulation in SPICE. IEEE Trans Electron Devices, 1987, 34(2):160 doi: 10.1109/T-ED.1987.22902
[7]
Angelov I, Zirath H, Rosman N. A new empirical nonlinear model for HEMT and MESFET devices. Microwave Theory and Techniques, 1992, 40(12):2258 doi: 10.1109/22.179888
[8]
Leckey J G. A scalable X-parameter model for GaAs and GaN FETs. Microwave Integrated Circuits Conference (EuMIC), 2011:13 http://piers.org/piersproceedings/download.php?file=cGllcnMyMDEzVGFpcGVpfDNQOF8xMTk1LnBkZnwxMjEwMTkxMDE1MTk=
[9]
Sun G, Xu Y, Liang A. The study of nonlinear scattering functions and X-parameters. International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2010:1086 http://www.sciencedirect.com/science/article/pii/B9780126137606500334
[10]
Cheng X, Wang Y. A surface-potential-based compact model for AlGaN/GaN MODFETs. IEEE Trans Electron Devices, 2011, 58(2):448 doi: 10.1109/TED.2010.2089690
[11]
Liu J, Yu Z, Sun L. An accurate surface-potential-based large-signal model for HEMTs. The International Conference on Simulation of Semiconductor Processes and Devices, Denver, Colorado, USA, 2012 http://adsabs.harvard.edu/abs/2014JSemi..35c4010J
[12]
Xu Wenjie, Sun Lingling, Liu Jun. A continuous and analytical surface potential model for SOI LDMOS. Chinese Journal of Semiconductors, 2007, 28(11):1712 doi: 10.1007/978-90-481-3046-7_3
[13]
Aziz M A, El-Abd A. Theoretical study of' the charge control in AlGaN/GaN HEMTs. Proceedings of the Twenty Third National Radio Science Conference, 2006:1
[14]
Yu T H, Brennan K F. Theoretical study of a GaN/AlGaN high electron mobility transistor including a non-linear polarization model. IEEE Trans Electron Devices, 2003, 50(2):315 doi: 10.1109/TED.2002.808519
[15]
Wang J, Sun L, Liu J. A surface-potential-based compact core model for GaN HEMTs. Journal of Microwaves, 2012, 6(1):1 https://www.deepdyve.com/lp/institute-of-electrical-and-electronics-engineers/asm-hemt-compact-model-for-gan-hemts-F93tv70mDU
[16]
Parish G, Umana-Membreno G A, Jolley S M, et al. AlGaN/AlN/GaN high electron mobility transistors with improved carrier transport. Conference on Optoelectronic and Microelectronic Materials and Devices, 2004:29 https://communities.research.uwa.edu.au/vivo/individual/pub343334353739
[17]
Gildenblat G, Li X, Wu W, et al. PSP:an advanced surface-potential-based MOSFET model for circuit simulation. IEEE Trans Electron Devices, 2006, 53(9):1979 doi: 10.1109/TED.2005.881006
[18]
Schwierz F. An electron mobility model for wurtzite GaN. Solid-State Electron, 2005, 49:889 doi: 10.1016/j.sse.2005.03.006

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    Received: 04 February 2013 Revised: 09 April 2013 Online: Published: 01 September 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(9): 094002
      Jie Wang, Lingling Sun, Jun Liu, Mingzhu Zhou. A surface-potential-based model for AlGaN/AlN/GaN HEMT[J]. Journal of Semiconductors, 2013, 34(9): 094002. doi: 10.1088/1674-4926/34/9/094002 J Wang, L L Sun, J Liu, M Z Zhou. A surface-potential-based model for AlGaN/AlN/GaN HEMT[J]. J. Semicond., 2013, 34(9): 094002. doi: 10.1088/1674-4926/34/9/094002.Export: BibTex EndNote
      Citation:
      Jie Wang, Lingling Sun, Jun Liu, Mingzhu Zhou. A surface-potential-based model for AlGaN/AlN/GaN HEMT[J]. Journal of Semiconductors, 2013, 34(9): 094002. doi: 10.1088/1674-4926/34/9/094002

      J Wang, L L Sun, J Liu, M Z Zhou. A surface-potential-based model for AlGaN/AlN/GaN HEMT[J]. J. Semicond., 2013, 34(9): 094002. doi: 10.1088/1674-4926/34/9/094002.
      Export: BibTex EndNote
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      A surface-potential-based model for AlGaN/AlN/GaN HEMT

      doi: 10.1088/1674-4926/34/9/094002
      • 1.

        Department of Electrical Engineering, Zhejiang University, Hangzhou 310027, China

      • 2.

        Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China

      Funds:

      the Zhejiang Provincial Key Science and Technology Innovation Team Gk110908002

      the Major State Basic Research Development Program of China 2010CB327403

      Project supported by the Major State Basic Research Development Program of China (No. 2010CB327403), the Zhejiang Provincial Key Science and Technology Innovation Team (No. Gk110908002), and the National Science Foundation of China (No.61102027)

      the National Science Foundation of China 61102027

      More Information
      • Corresponding author: Hassan Kaatuzian, Email: sunll@hdu.edu.cn
      • Received Date: 2013-02-04
      • Revised Date: 2013-04-09
      • Published Date: 2013-09-01

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