Fig. 1.
The cross section of the RF LDMOS
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Ting Yu, Ling Luo. An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process[J]. Journal of Semiconductors, 2013, 34(9): 094007. doi: 10.1088/1674-4926/34/9/094007
T Yu, L Luo. An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process[J]. J. Semicond., 2013, 34(9): 094007. doi: 10.1088/1674-4926/34/9/094007.
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An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process
doi: 10.1088/1674-4926/34/9/094007
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Abstract
Two types of RF LDMOS devices, specified for application in the driver stage and output stage of a power amplifier, are designed based on a modified CMOS process. By optimizing the layout and process, the output capacitance per unit of gate width is as low as 225 fF/mm. The driver stage and output stage devices achieve an output power of 44 W with a PAE of 82% and 230 W with a PAE of 72.3%, respectively (P3dB compression) at 1 GHz. Both devices are capable of withstanding extremely severe ruggedness tests without any performance degradation. These tests are 3-5 dB overdrive, 10:1 voltage standing wave ratio mismatch load through all phase angles, and 40% drain overvoltage elevation at a working point of P3dB.-
Keywords:
- PAE,
- ruggedness,
- RF LDMOS,
- CMOS,
- output power
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References
[1] Aaen P H, Pla J A, Wood J. Modeling and characterization of RF and microwave power FETs. New York:Cambridge University Press, 2007 http://ci.nii.ac.jp/ncid/BA83863664[2] Lester D. The quest for a rugged transistor. Freescale Report http://www.microwavejournal.com/authors/3062-david-lester[3] Yu T, Zeng D, Liu N. RF LDMOS design based on modified CMOS process. ICSICT, Xi'an, China, 2012 http://ieeexplore.ieee.org/document/6467620/[4] Formicone G, Boueri F, Burger J, et al. Analysis of bias effects on VSWR ruggedness in RF LDMOS for avionics applications. Proceeding of the 3rd European Microwave Integrated Circuits Conference, 2008:28 http://ieeexplore.ieee.org/document/4772220/?reload=true&arnumber=4772220[5] Ren C, Liang Y C, Xu S. New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers. TEMCOM Proc, 2000, 3:29 http://ieeexplore.ieee.org/document/892214/?arnumber=892214&filter%3DAND(p_IS_Number:19251)[6] GaN for LDMOS users. Application Note AN-010, Nitronex corporation[7] Kim B, Moon J, Kim I. Efficiently amplified. Microwave Magazine, 2010, 11:87 http://ieeexplore.ieee.org/abstract/document/5506785/ -
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