SEMICONDUCTOR TECHNOLOGY

Effect of three kinds of guanidinium salt on the properties of a novel low-abrasive alkaline slurry for barrier CMP

Guodong Chen, Yuling Liu and Xinhuan Niu

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 Corresponding author: Chen Guodong, Email:980294383@qq.com

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Abstract: The influence of three kinds of guanidinium salt on the removal rate selectivity of different materials was studied during the barrier chemical mechanical polishing (CMP) process at first. The three kinds of guanidine saltguanidine hydrochloride, guanidine nitrate and guanidine carbonate. Then we compared the effect of the three kinds of guanidine salt on the dishing, erosion and surface roughness value. In the end, the reaction mechanism was studied through electrochemical analysis. All the results indicate that there is a better performance of the slurry with guanidine hydrochloride than the slurries with the other two kinds of guanidine salt. It effectively improved the removal rate selectivity and the surface roughness under the premise of low abrasive concentration and low polishing pressure, which is good for the optimization of the alkaline slurry for the barrier CMP process.

Key words: guanidiniumremoval rate selectivityelectrochemicalCMP



[1]
Li J, Liu Y H, Wang T Q. Electrochemical investigation of copper passivation kinetics and its application to low-pressure CMP modeling. Appl Surf Sci, 2013, 265:764 doi: 10.1016/j.apsusc.2012.11.106
[2]
Wang Chenwei, Liu Yuling, Niu Xinhuan. An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers. Journal of Semiconductors, 2012, 33(4):046001 doi: 10.1088/1674-4926/33/4/046001
[3]
Chen Rui, Kang Jin, Liu Yuling. Study of a new weakly alkaline slurry for copper planarization at a reduced down pressure. Journal of Semiconductors, 2014, 35(2):026005 doi: 10.1088/1674-4926/35/2/026005
[4]
Liao C L, Guo D, Wen S Z. Stress analysis of Cu/low-k interconnect structure during whole Cu-CMP process using finite element method. Microelectron Reliab, 2013, 53:767 doi: 10.1016/j.microrel.2013.01.011
[5]
Wang C W, Gao J J, Tian J Y. Chemical mechanical planarization of barrier layers by using a weakly alkaline slurry. Microelectron Eng, 2013, 108:71 doi: 10.1016/j.mee.2013.04.001
[6]
Liu X Y, Liu Y L, Liang Y. Effect of slurry components on chemical mechanical polishing of copper at low down pressure and a chemical kinetics model. Thin Solid Films, 2011, 520:400 doi: 10.1016/j.tsf.2011.06.050
[7]
Chiu S Y, Wang Y L, Liu C P. High-selectivity damascene chemical mechanical polishing. Thin Solid Films, 2006, 498:60 doi: 10.1016/j.tsf.2005.07.063
[8]
Li Hailong, Kang Jin, Liu Yuling. Effect of guanidine hydrochloride on removal rate selectivity and wafer topography modification in barrier CMP. Journal of Semiconductors, 2014, 35(3):036002 doi: 10.1088/1674-4926/35/3/036002
[9]
Chen Y H, Tsai T H, Yen S C. Acetic acid and phosphoric acid adding to improve tantalum chemical mechanical polishing in hydrogen peroxide-based slurry. Microelectron Eng, 2010, 87:174 doi: 10.1016/j.mee.2009.07.009
[10]
Janjama S V S B, Peethalaa B C, Zheng J P. Electrochemical investigation of surface reactions for chemically promoted chemical mechanical polishing of TaN in tartaric acid solutions. Mater Chem Phys, 2010, 123:521 doi: 10.1016/j.matchemphys.2010.05.008
[11]
Rock S E, Crain D J, Pettit C M. Surface-complex films of guanidine on tantalum nitride electrochemically characterized for applications in chemical mechanical planarization. Thin Solid Films, 2012, 520:2892 doi: 10.1016/j.tsf.2011.12.005
[12]
Rock S E, Craina D J, Zheng J P. Electrochemical investigation of the surface-modifying roles of guanidine carbonate in chemical mechanical planarization of tantalum. Mater Chem Phys, 2011, 129:1159 doi: 10.1016/j.matchemphys.2011.05.079
[13]
Rock S E, Crain D J, Pettit C M. Surface-complex films of guanidine on tantalum nitride electrochemically characterized for applications in chemical mechanical planarization. Thin Solid Films, 2012, 520:2892 doi: 10.1016/j.tsf.2011.12.005
Fig. 1.  (a) The dishing measurement location and (b) erosion measurement location on the pattern wafer

Fig. 2.  The pH value and particle size with the slurries

Fig. 3.  The removal rate with the slurries.

Fig. 4.  (Color online) The pH value and particle size with the slurries

Fig. 5.  (Color online) The pH value and particle size with the slurries

Fig. 6.  (Color online) The AFM picture of (a) slurry A (with guanidine hydrochloride, RSM 1.12 nm), (b) slurry B (with guanidine carbonate, RSM 2.03 nm) and (c) slurry C (with guanidine nitrate, RSM 4.20 nm)

Fig. 7.  (Color online) The Tafel plots of Cu

Fig. 8.  (Color online) The Tafel plots of Ta

Table 1.   The whole CMP process parameters

Table 2.   The composition ratio of the slurries

[1]
Li J, Liu Y H, Wang T Q. Electrochemical investigation of copper passivation kinetics and its application to low-pressure CMP modeling. Appl Surf Sci, 2013, 265:764 doi: 10.1016/j.apsusc.2012.11.106
[2]
Wang Chenwei, Liu Yuling, Niu Xinhuan. An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers. Journal of Semiconductors, 2012, 33(4):046001 doi: 10.1088/1674-4926/33/4/046001
[3]
Chen Rui, Kang Jin, Liu Yuling. Study of a new weakly alkaline slurry for copper planarization at a reduced down pressure. Journal of Semiconductors, 2014, 35(2):026005 doi: 10.1088/1674-4926/35/2/026005
[4]
Liao C L, Guo D, Wen S Z. Stress analysis of Cu/low-k interconnect structure during whole Cu-CMP process using finite element method. Microelectron Reliab, 2013, 53:767 doi: 10.1016/j.microrel.2013.01.011
[5]
Wang C W, Gao J J, Tian J Y. Chemical mechanical planarization of barrier layers by using a weakly alkaline slurry. Microelectron Eng, 2013, 108:71 doi: 10.1016/j.mee.2013.04.001
[6]
Liu X Y, Liu Y L, Liang Y. Effect of slurry components on chemical mechanical polishing of copper at low down pressure and a chemical kinetics model. Thin Solid Films, 2011, 520:400 doi: 10.1016/j.tsf.2011.06.050
[7]
Chiu S Y, Wang Y L, Liu C P. High-selectivity damascene chemical mechanical polishing. Thin Solid Films, 2006, 498:60 doi: 10.1016/j.tsf.2005.07.063
[8]
Li Hailong, Kang Jin, Liu Yuling. Effect of guanidine hydrochloride on removal rate selectivity and wafer topography modification in barrier CMP. Journal of Semiconductors, 2014, 35(3):036002 doi: 10.1088/1674-4926/35/3/036002
[9]
Chen Y H, Tsai T H, Yen S C. Acetic acid and phosphoric acid adding to improve tantalum chemical mechanical polishing in hydrogen peroxide-based slurry. Microelectron Eng, 2010, 87:174 doi: 10.1016/j.mee.2009.07.009
[10]
Janjama S V S B, Peethalaa B C, Zheng J P. Electrochemical investigation of surface reactions for chemically promoted chemical mechanical polishing of TaN in tartaric acid solutions. Mater Chem Phys, 2010, 123:521 doi: 10.1016/j.matchemphys.2010.05.008
[11]
Rock S E, Crain D J, Pettit C M. Surface-complex films of guanidine on tantalum nitride electrochemically characterized for applications in chemical mechanical planarization. Thin Solid Films, 2012, 520:2892 doi: 10.1016/j.tsf.2011.12.005
[12]
Rock S E, Craina D J, Zheng J P. Electrochemical investigation of the surface-modifying roles of guanidine carbonate in chemical mechanical planarization of tantalum. Mater Chem Phys, 2011, 129:1159 doi: 10.1016/j.matchemphys.2011.05.079
[13]
Rock S E, Crain D J, Pettit C M. Surface-complex films of guanidine on tantalum nitride electrochemically characterized for applications in chemical mechanical planarization. Thin Solid Films, 2012, 520:2892 doi: 10.1016/j.tsf.2011.12.005
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    Received: 04 April 2014 Revised: 16 June 2014 Online: Published: 01 November 2014

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      Guodong Chen, Yuling Liu, Xinhuan Niu. Effect of three kinds of guanidinium salt on the properties of a novel low-abrasive alkaline slurry for barrier CMP[J]. Journal of Semiconductors, 2014, 35(11): 116003. doi: 10.1088/1674-4926/35/11/116003 G D Chen, Y L Liu, X H Niu. Effect of three kinds of guanidinium salt on the properties of a novel low-abrasive alkaline slurry for barrier CMP[J]. J. Semicond., 2014, 35(11): 116003. doi: 10.1088/1674-4926/35/11/116003.Export: BibTex EndNote
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      Guodong Chen, Yuling Liu, Xinhuan Niu. Effect of three kinds of guanidinium salt on the properties of a novel low-abrasive alkaline slurry for barrier CMP[J]. Journal of Semiconductors, 2014, 35(11): 116003. doi: 10.1088/1674-4926/35/11/116003

      G D Chen, Y L Liu, X H Niu. Effect of three kinds of guanidinium salt on the properties of a novel low-abrasive alkaline slurry for barrier CMP[J]. J. Semicond., 2014, 35(11): 116003. doi: 10.1088/1674-4926/35/11/116003.
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      Effect of three kinds of guanidinium salt on the properties of a novel low-abrasive alkaline slurry for barrier CMP

      doi: 10.1088/1674-4926/35/11/116003
      Funds:

      the Hebei Natural Science Foundation of China E2013202247

      Project supported by the Special Project Items NO. 2 in National Long-Term Technology Development Plan, China (No. 2009ZX02308) and the Hebei Natural Science Foundation of China (E2013202247)

      the Special Project Items NO. 2 in National Long-Term Technology Development Plan, China 2009ZX02308

      More Information
      • Corresponding author: Chen Guodong, Email:980294383@qq.com
      • Received Date: 2014-04-04
      • Revised Date: 2014-06-16
      • Published Date: 2014-11-01

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